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1. Hiroshi Kanazawa

   ...hnological Institute, Nagoya in 2001. He is now Marketing Unit Leade...

   Basic page - 2017-01-11 11:39:49.0

2. Charles Bailley

   ...sil Corporation U.S. Patents 7,028,194 ; 7,028,194 Former Nuclear Su...

   Basic page - 2017-01-11 11:46:39.0

3. Yi Pei

   ... University, Beijing, China, in 2000, the M.S and Ph.D degrees in El...

   Basic page - 2017-12-26 16:42:23.0

4. C.K. Lin

   ... development team totally up to 26 people and Customer engineer team...

   Basic page - 2024-12-04 14:04:31.0

5. Pengfei Wang

   ...新型微电子器件的研发，目前授权发明专利50余项，其中美国专利授权20余项。于2003年最早系统地命名和定义了TFET、CTFET、NTF...

   Basic page - 2017-01-11 13:09:34.0

6. Durga Chaturvedula

   ...Chaturvedula Managing Director, 200mm Product Mgmt. & Technology...

   Basic page - 2017-02-15 17:33:59.0

7. Yufeng Qiu

   ...ter valve and the world’s first 200kV DC circuit breaker, etc., whic...

   Basic page - 2017-03-07 13:54:24.0

8. Symposium X: Si Materials and Photovoltaic Technology

   ...    Monday, March 14, 2016  Shanghai International Co...

   Basic page - 2016-12-16 14:01:04.0

9. Symposium IX: Design and Automation of Circuits and Systems

   ...p; * to designate invite talk - 25 min   to designate invite ta...

   Basic page - 2025-03-21 15:28:22.0

10. Prof. Yu Li

    ...ity. She completed her Ph.D. in 2022 at The Chinese University of Ho...

    Basic page - 2024-12-27 11:30:16.0