Symposium Chair: Prof. Xinping Qu, Fudan University, China


** to designate keynote talk - 30 min      
* to designate invite talk - 25 min
  to designate regular talk - 15 min

Sunday, March 17, 2024 Shanghai International Convention Center
Meeting Room: 5D+5E

Session I: prensent and future
Session Chair: Xinping Qu
**13:30-14:00 CMP equipments and application technologies for advanced manuafacturing process
  Xinchun Lu, Tsinghua University
*14:00-14:25 CMP Technology for More than Moore Innovation
  Haedo Jeong, Pusan National University
*14:25-14:50 New methodology for anisotropic nanoparticles characterization by polarization light scattering: length and diameter determination of rod-like nanoparticles
  David Jacob, Cordouan Technology
14:50-15:10 Coffee Break
   

Session II: ILD and STI slurry
Session Chair: Shoutian Li
*15:10-15:35 Ceria slurry applications to STI, ILD and advanced packaging CMP
  Yuchun Wang, Anji microelectronics
*15:35-16:00 From Good to Great: The Power of Advanced ILD CMP Slurries in Boosting Performance
  Juliane Hitzel, Advanced NanoSurface Technologies Co., Ltd.
16:00-16:15 CeO2 slurry post rinse condition research in STI CMP technology
  Zhengyi Li, Semiconductor Manufacturing North China (Beijing) Corp.
16:15-16:30 INCOMING IMPACT ON DISHING IMPROVEMENT IN FEOL PROCESS
  Huize Du, Shanghai Huali Integrated Circuit Corporation, Shanghai, China
16:30-16:45 Positively charged ceria particles cleaning by HCOOH-H2O2-DIW solution
  Wenlong Tang, Fudan University
16:45-17:00 Study on the dispersing effect and mechanism of LABSA on SiO2 in an alkaline barrier slurry
  Fangyuan Wang, Hebei University of Technology
   

Monday, March 18, 2024 Shanghai International Convention Center
Meeting Room: 5D+5E


Session III: Metal CMP
Session Chair: Jingxun Fang
*09:00-09:25 Mechanism Research and Improvement of AL Scratch Defect Based on MG CMP
  Qingqing Duan, Shanghai Huali Integrated Circuit Corp.
09:25-09:40 Cu post CMP cleaner development utilizing AI system
  Atsushi Mizutani, Fujifilm corporation
09:40-09:55 Effect of Green Corrosion Inhibitors on the Performance of Copper-Cobalt CMP
  Chao He, Institute of Microelectronics, Hebei University of Technology
09:55-10:10 Effect of Green Additive Sarcosine as Inhibitor for Cobalt-Based Copper Interconnect CMP
  ChangXin Dong, Hebei University of Technology
10:10-10:30 Coffee Break
   

Session IV: Compound Semiconductor CMP
Session Chair: Baoguo Zhang
*10:30-10:55 The development progress of new high-efficiency silicon carbide substrate polishing slurry
  Xiuyan Sun, Zhangjiagang Anchu Technology Ltd.
*10:55-11:20 Research on the electro-fenton magnetorheological finishing technology for GAN wafer
  Qiusheng Yan, Guangdong University of Technology
11:20-11:35 Study on the Slurry for Chemical Mechanical Polishing of GaN Wafer
  Steve Liu, Hebei University of Technology
11:35-13:30 Lunch Break
   

Session V: Novel Films CMP and Process
Session Chair: Jie Chen
*13:30-13:55 CMP characteristics of IGZO thin film with a variety of process parameters
  Ming Zeng, Beijing Superstring Academy of Memory Technology, Beijing, China
*13:55-14:20 Study on the Processing Characteristics and Polishing Technology of Easily Cleavable Gallium Oxide Crystals
  Hai Zhou, Yancheng Institute of Technology
14:20-14:35 Chemical Effect Mechanism in Chemical Mechanical Polishing of Silicon Wafer
  Chenwei Wang, Jiangsu Shanshui Semiconductor Technology Co., Ltd.
14:35-14:50 EOE evolution processes of same step profile in CMP with different one-material polishing time
  Lixiao Wu, Lanzhou University of Technology
14:50-15:05 Effect of Surfactants on CMP Properties of C-, A- and R-plane Sapphire
  Xinjie Li, Hebei University of Technology
15:05-15:25 Coffee Break
   
Poster Session:
  A Novel Endpoint System Application On DRAM W CMP Application
  Lin Wang, Applied Materials
  DISHING STUDY ON CHEMICAL MECHANICAL PLANARIZATION (CMP)
  Huize Du, Shanghai Huali Integrated Circuit Corporation, Shanghai, China
  ILD-CMP Wafer Edge Thickness Profile Stability Improvement Via Acid Silicon Oxide Slurry Formulation Design
  Zhijie Zhang Liang Tian, Semiconductor Manufacturing North China (Beijing) Corp, Beijing, China
  Study on Ceria Slurry for Chemical Mechanical Polishing of 4H-SiC
  Sihui Qin, Hebei University of Technology
  The effect of CeO2 / SiO2 composite abrasive on the performance of silicon CMP under low concentration conditions
  Liu Wenbo, Hebei University of Technology
  Chemical Mechanical Planarization of SiC Si-face by Al2O3-based acid slurry
  Zehao Yue, Hebei University of Technology
  Multiple approaches to achieve high throughput of Cu CMP process in LK 3 platens platform
  Jiaming Xu, Applied Materials
  Achieved World-Class BSI Si CMP TTV Performance via FVXE NIR® MPC System
  Likun Cheng, Applied Materials
  Study on chemical-mechanical synergies in polishing of ruthenium
  Hongyu Di, Dalian University of Technology
  Effects of Polyvinyl Alcohol on Silicon Chemical Mechanical
  Shuangshuang Lei, Hebei University of Technology
  Motor torque algorithm and polish pressure optimization in STI CMP Process
  Chen Qiang, Applied Materials
  RTPC XE for 28nm BEOL Cu CMP
  Youlai Xiang, Applied Materials (China), Inc. China
  Study on 28nm Technology Node ILD0-CMP Micro_Scratch Defect Reduction
  Xing Ma, Shanghai Huali Integrated Circuit Corp.
  China 1st RTPC X/Fullscan X implemented in LK Metal CMP
  Zhenxing Song, Applied Materials (China)
  Feasibility Analysis of Skip ILD-CMP Scheme on 28nm Technology Node
  Fan Chen, Shanghai Huali Integrated Circuit Corp.
  A Trade-off Balance Between Cu Corrosion and Cu Oxide Defect
  Chenyu Zhou, Shanghai Huali Integrated Circuit Corp.
  The Precise Profile Control of RTPC X in CIS Cu CMP
  Mengxia Li, Applied Materials
  Micro-Scratch Defect Improvement for CMP Process
  Kun Zhang, Applied Material