Symposium Chair: Prof. Xinping Qu, Fudan University, China


** to designate keynote talk - 30 min      
* to designate invite talk - 25 min
  to designate regular talk - 15 min

Sunday, March 22, 2026, Kerry Hotel Pudong, Shanghai
Meeting Room: Tower Room 8

Session I: CMP and Advanced Packaging
Session Chair: Xin-Ping Qu
**13:30-14:00 CMP as an Enabling Technology: Opportunities and Challenges
  Jingoo Park, Hanyang University
**14:00-14:30 CMP in Hybrid Bonding and Advanced Packaging - Challenges and Strategies
  Knut Gottfried, ErzM-Technologies
*14:30-14:55 Emerging CMP Solutions for Advanced Packaging
  Jae-Dong Lee, KC Tech
   

Session II: AI Driven CMP and Cleaning
Session Chair: Yuchun Wang
*14:55-15:20 Machine Learning in Chemical Mechanical Polishing: Marriage of Convenience or True Love Story?
  Jiakai Zhou, Hebei University of Technology
*15:20-15:45 Data Guided Corrosion Control Strategies for Advanced CMP Processes
  Jihoon Seo, Hanyang University
*15:45-16:10 Nanobubbles: a Sustainable Technology in Semiconductor Cleaning
  Lijuan Zhang, Shanghai Advanced Research Institute, Chinese Academy of Sciences
16:30-18:00 Panel Discussion
   

Monday, March 23, 2026, Kerry Hotel Pudong, Shanghai
Meeting Room: Tower Room 8

Session III: Si and SiO2 Polishing
Session Chair: Weili Liu
*08:35-09:00 Abrasive Challenges and Transformations in CMP Slurry
  Jiani Chu, Qnity Electronics, Inc.
*09:00-09:25 Understand Prestonian Behavior in CMP
  Shoutian Li, Anji Microelectronics
*09:25-09:50 The Manufacture of Ultra-Clean and Ultra-Flat Silicon Wafers
  Hui Wang, Zhonghuan Advanced Semiconductor Material Co., Ltd
*09:50-10:15 Integrated Strategy for High Efficiency and Low Defect Wafer Planarization Processes
  Life Zhang, Tsinghua University
10:15-10:30 Improving Defect Performance in Silicon Buffing Chemical Mechanical Polishing (CMP) through Process integration and Parameters Optimization
  Huaifang Li, FUJIAN JINHUA INTEGRATED CIRCUIT CO., LTD
10:30-10:50 Coffee Break
   

Session IV: Metal Polishing
Session Chair: Yurong Que
*10:50-11:15 Atomic-Level Material Removal Mechanism of Copper in Chemical Mechanical Polishing
  Liang Jiang, Southwest Jiaotong University
11:15-11:30 The Effect of Amino Acids Corrosion Inhibitor on Chemical Mechanical Polishing of Molybdenum
  Qiancheng Sun, Fudan University
11:30-11:45 The Effect of Phosphate-Functionalized Anionic Surfactants on the CMP Performance of Ruthenium-Based Copper Interconnect Films
  Shaobo Song, Hebei University of Technology
11:45-12:00 Effects of Oxidants and Complexing Agents on Enhancing the Removal Rate of Ti Barrier Layers during Chemical Mechanical Polishing Process
  Qinhua Miao, China University of Mining & Technology-Beijing
12:00-13:30 Lunch Break
   

Session V: Dielectrics CMP
Session Chair: Shoutian Li
*13:30-13:55 Development of a Chemical-Mechanical Action-based Predictive Framework for CMP MRR and Micro-topography
  Ping Zhou, Dalian University of Technology
*13:55-14:20 Regulation Strategies of Novel Mesoporous Ceria Abrasives for Advanced CMP
  Wei Yuan, Fudan University
14:20-14:35 Investigation of Inhibitor Effects in STI CMP Slurries Based on Mesoporous Ceria
  Linyi Shen, Fudan University
   

Session VI: CMP of Compound Semiconductor
Session Chair: Baoguo Zhang
*14:35-15:00 Structural Conversion of Silicon Carbide Abiding Increase of Entropy and Its Polishing Mechanism
  Tao Sun, Shanghai Institute of Technology
*15:00-15:25 Ultra-flat Surface and Gradient Etching for Advanced Application Using Ion Beam Trimming
  Zichao Li, Jiangsu Leuven Instruments Co. Ltd
15:25-15:40 A novel ICP-Assisted CMP Hybrid Approach for Ultra-Smooth 4H-SiC
  Bingyi Shen, Shanghai Jiao Tong University
15:40-15:55 Effect of Surfactants on the Properties of C-, R-, and M-Plane Sapphire
  Mengqi Wang, Hebei University of Technology
15:55-16:10 Effect of Complexing Agents on CMP Properties of C-, A-, and M- Plane Sapphire
  Qing Ma,Hebei University of Technology
   
Poster Session:16:00-18:00
  Shaped Abrasives for Advanced CMP Technology
  Zuozuo Wu, Zhejiang University
  A Study on Cobalt Interconnect CMP and the Mechanisms of Surface/Interface Corrosion Inhibition
  Zhuoya Xing, Hebei University of Technology
  Study on the Process of 3D Structure Semiconductor Multilayer Thin Film W CMP
  Jian Li, Beijing Superstring Academy of Memory Technology
  The Influence of Glycine on The Removal Rate Selectivity of Titanium Nitride-Based Cobalt Interconnects
  Yuanshen Cheng, Hebei Geo University
  Influence of Process Parameters on Material Removal in Chemical Mechanical Polishing: A Stress Distribution Modeling for Optimizing Polishing Uniformity
  Yuanzhen Huang, Zhejiang University
  Kinematic Analysis of Wafer-Pad Relative Motions for Chemical Mechanical Polishing
  Shukan Jian, Zhejiang University
  The Study of STI CMP with Ceria-Based Slurry to Resolve Worse Particle Performance
  Kewen Wang, Applied Materials China
  Advanced Rinse Strategies for Defect Control in Metal CMP
  Weiguo Wang, Applied Materials China
  Optimizing Pad Groove Pattern for Better NU in Cu CMP
  Yixuan Liu, Applied Materials China
  HPPC Close Loop Control for Cu CMP Process Stability and Productivity Improvement
  Na Xiao, Applied Materials China
  BSLR Inline Discolor Defect Improvement with iAPC Application
  Mengyao Liu, Applied Materials China
  BSI Bonding Loop Edge Issue Improvement by CMP
  Yan Gao, Applied Materials China
  Cu CMP Barrier Platen Oxide-Cu Selectivity Analysis and Tuning
  Youlai Xiang, Applied Materials China
  Advanced CMP Slurry for Cu-Cu Hybrid Bonding in Advanced Packaging of Semiconductor
  Dennis Kim, Qnity Electronics
  Process Characteristics and Impact of STI-CMP Post-Rinse Steps
  Yu Yao, Semiconductor Technology Innovation Center (Beijing) Corporation, Beijing, China
  Impact of Wafer Transfer for CuO Residues During Cu CMP
  Yu Yao, Semiconductor Technology Innovation Center (Beijing) Corporation, Beijing, China
  Fluorine Doping for Enhanced CMP Performance: Boosting Ce3?/Oxygen Vacancies in One-step Synthesized Ceria Abrasives
  Wei Yuan, Fudan Univerisity
  Preparation and Performance Optimization of Boron-doped Ultrasmall Cerium Oxide Abrasives for Higy-Efficiency CMP
  Wei Yuan, Fudan Univerisity