Symposium IV: Thin Film, Plating and Process Integration
Symposium Committee
Symposium IV: Thin Film, Plating and Process Integration
• High k gate dielectrics and metal gates thin film materials, processes and integration schemes
• Thin film processes and materials for straining engineering, including SiGe, SiC, stress liners and SMT
• Advanced channel materials, such as Ge and III/V channels, related topics and integration schemes, including Ge passivation
• Processes, properties, integration and reliability for low k dielectric materials
• Thin film processes and materials for high aspect ratio gap fill
• Self-aligned silicides, Schottky barrier source/drain and advanced contact technologies
• Cleaning technology in manufacturing
• Innovative metrology for 45nm and beyond
• Electroplating and electroless deposition materials and processes
• Silicon nanowire, carbon nanotube, graphene or other new materials for FET, metallization, dielectrics, contacts, strain and channels
• Key process module development and integration
• Materials for 45 nm, 32 nm and 22 nm nodes of semiconductor manufacturing
• Strained silicon process and integration
• Reliability of copper/low-k interconnect
• High-k/metal gate and future transistors
• Plasma assisted material processes
• Implantation and millisecond anneal
Symposium Committee
|
Dr. Xiaoping Shi Chair |
Beijing Naura Microelectronics, China |
|
Dr. Zhen Guo Co-Chair |
Microsoft, USA |
|
Dr. Beichao Zhang Co-Chair |
VP of Hangzhou HFC, China |
|
Dr. Chao Zhao Co-Chair |
Beijing Superstring Academy of Memory Technology (SAMT), China |
|
Dr. Huang Liu Co-Chair |
Global Foundries, USA |
|
Dr. Jiang Yan Co-Chair |
North China University of Technology, China |
|
Dr. Ran LIU Co-Chair |
Fudan University, China |
|
Prof. Yu-Long Jiang Member |
Fudan University, China |
|
Dr. Li-Qun Xia Member |
Applied Materials, USA |
|
Dr. Chih-Chao Yang Member |
IBM |
|
Dr. Jianhua Ju Member |
HFC Semiconductor, China |
|
Dr. Ganming Zhao Member |
Mattson |
|
Dr. Zheyao Wang Member |
Tsinghua University, China |
|
Dr. Larry Zhao Member |
Lam Research, USA |
|
Dr. Jiaxiang Nie Member |
Leadmicro, China |
|
Dr. Xun Gu Member |
ASM |
|
Dr. Sean Chang Member |
PIOTECH |
|
Dr. Heng Tao Member |
AMEC, China |
|
Dr. Chenyu Wang Member |
Applied Materials, China |
Symposium IV: Thin Film, Plating and Process Integration
• High k gate dielectrics and metal gates thin film materials, processes and integration schemes
• Thin film processes and materials for straining engineering, including SiGe, SiC, stress liners and SMT
• Advanced channel materials, such as Ge and III/V channels, related topics and integration schemes, including Ge passivation
• Processes, properties, integration and reliability for low k dielectric materials
• Thin film processes and materials for high aspect ratio gap fill
• Self-aligned silicides, Schottky barrier source/drain and advanced contact technologies
• Cleaning technology in manufacturing
• Innovative metrology for 45nm and beyond
• Electroplating and electroless deposition materials and processes
• Silicon nanowire, carbon nanotube, graphene or other new materials for FET, metallization, dielectrics, contacts, strain and channels
• Key process module development and integration
• Materials for 45 nm, 32 nm and 22 nm nodes of semiconductor manufacturing
• Strained silicon process and integration
• Reliability of copper/low-k interconnect
• High-k/metal gate and future transistors
• Plasma assisted material processes
• Implantation and millisecond anneal