Dr. Li-Qun Xia
AMAT, USA

Li-Qun Xia received the Ph.D in chemical engineering from Cornell University, Ithaca, NY. His thesis topic focused on reaction dynamics of Silicon thin films. He joined Applied Materials, Inc. in 1995 as a process engineer in the SACVD division. Currently he is the Sr. Technology Director in Dielectric System and Modules (DSM) division, leading the Atomic Layer Deposition (ALD) technology group. In the past decade, he has lead engineering team for the development, integration and commercialization of the CVD low k materials for inter-metal dielectric and copper barrier applications, Si strain engineering and other dielectric materials and processes. Dr. Xia holds over 200 US and international patents in semiconductor material, process, integration and equipment. He has over 50 journal publications/conference papers and also co-authored the book chapter "Chemical Vapor Deposition" in 《Handbook of Semiconductor Manufacturing Technology》.