Symposium IV: Thin Film, Plating and Process Integration

Symposium IV: Thin Film, Plating and Process Integration

Symposium Committee

Dr. Xiaoping Shi Chair	Beijing Naura Microelectronics, China
Dr. Zhen Guo Co-Chair	Microsoft, USA
Dr. Beichao Zhang Co-Chair	VP of Hangzhou GHS Semiconductor China
Dr. Chao Zhao Co-Chair	Beijing Superstring Academy of Memory Technology (SAMT), China
Dr. Huang Liu Co-Chair	Global Foundries, USA
Dr. Jiang Yan Co-Chair	North China University of Technology, China
Dr. Ran LIU Co-Chair	Fudan University, China
Prof. Yu-Long Jiang Member	Fudan University, China
Dr. Li-Qun Xia Member	Applied Materials, USA
Dr. Chih-Chao Yang Member	IBM
Dr. Jianhua Ju Member	Hangzhou GHS Semiconductor, China
Dr. Ganming Zhao Member	Mattson
Dr. Zheyao Wang Member	Tsinghua University, China
Dr. Larry Zhao Member	Lam Research, USA
Dr. Jiaxiang Nie Member	Leadmicro, China
Dr. Xun Gu Member	ASM
Dr. Sean Chang Member	PIOTECH
Dr. Heng Tao Member	AMEC, China
Dr. Chenyu Wang Member	Applied Materials, China

Symposium IV: Thin Film, Plating and Process Integration

  -  Thin film processes and Materials for semiconductor manufacturing, including (but not limited to) the following fields:
  •  Thin film processes and materials for high k gate dielectrics and metal gate processes, and related integration schemes
  •  Thin film processes and materials for straining engineering, including SiGe, SiC, stress liners and SMT
  •  Self-aligned silicides, Schottky barrier source/drain and advanced contact technologies
  •  Thin film processes and materials for high aspect ratio gap fill
  •  Silicon nanowire, carbon nanotube, graphene or other new materials for FET, metallization, dielectrics, contacts, strain and channels
  •  New 2D materials for future devices
  •  Plasma assisted material processes
  •  Electroplating and electroless deposition materials and processes

  -  Process integration, covering (but not limited to) the following fields:
  •  Key process module development and integration
  •  Strained silicon process and integration
  •  Cleaning technology for process integration
  •  Implantation and millisecond anneal
  •  Process integration for future transistors
  •  Innovative metrology for leading-edge integration
  •  Impacts of process integration on device reliability