Symposium I: Device Engineering and Memory Technology
Symposium Committee
Symposium I: Device Engineering and Memory Technology
• Advanced MOS devices
• Memory devices (DRAM, SRAM, Flash, emerging memory devices)
• Device reliability
• Mobility enhancement technology
• Shallow junction formation
• Source/drain engineering (silicide/salicide)
• RF/HV/Power devices
• Other emerging devices
Symposium Committee
Dr. Ru HUANG Chair |
Southeast University , China |
Dr. Cor Claeys Co-Chair |
KU, Leuven, Belgium |
Dr. Minhwa Chi Co-Chair |
SVP/TD, SiEn (Qindao) Integrated Circuits Co., China |
Dr. Chung Lam Co-Chair |
Jiangsu Advanced Memory Technology Co. Ltd., China |
Prof. Jong-Ho Lee Co-Chair |
Seoul National University, Korea |
Prof. Ming Liu Co-Chair |
Fudan University, China |
Prof. Yuchao Yang Co-Chair |
Peking University, China |
Dr. Wensheng Qian Member |
HHGrace, China |
Dr. Huiling Shang Member |
TSMC |
Dr. Zhiqiang Wei Member |
Avalanche Technology |
Dr. Hong Wu Member |
SMIC, China |
Prof. Huaqiang Wu Member |
Tsinghua University |
Dr. Frank Bin Yang Member |
Qualcomm, USA |
Prof. Mario Lanza Member |
the King Abdullah University of Science and Technology (KAUST), Saudi Arabia |
Prof. Xinran Wang Member |
Nanjing University, China |
Prof. Qianqian Huang Member |
Peking University, China |
Prof. Peng Zhou Member |
Fudan Univeristy, China |
Dr. Bin Yu Member |
Zhejiang Univeristy, China |
Symposium I: Device Engineering and Memory Technology
• Advanced MOS devices
• Memory devices (DRAM, SRAM, Flash, emerging memory devices)
• Device reliability
• Mobility enhancement technology
• Shallow junction formation
• Source/drain engineering (silicide/salicide)
• RF/HV/Power devices
• Other emerging devices