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Dr David Haynes VP Strategic Marketing of Lam Research Corporation |
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讲师简介 / Speaker Bio David gained a B.Eng and PhD in Materials Engineering from Swansea University. His PhD thesis was in the field of organic semiconductors for electronic and optoelectronic applications. In his professional career, David has accrued more than 25 years of experience in the Semiconductor Capital Equipment and research instrumentation sectors. Focused on new technology development, he has a strong process background in plasma etch and deposition for optoelectronics, photonics, MEMS, Power and RF Electronics, as well as advanced chip packaging technologies. Building on this technical knowledge, David has a proven track record in developing strategic business partnerships, specializing in new technology developments and introduction of enabling process capabilities to leading semiconductor fabs worldwide. David Joined Lam Research in June 2016. He is currently Vice President of Strategic Marketing in Lam’s Customer Support Business Group and is responsible for Lam’s strategy in Specialty Technologies. 摘要 / Abstract 碳化硅、氮化镓等第三代宽带隙半导体材料在功率器件市场有一些关键应用，尤其是氮化镓在大功率、高频应用中有着巨大潜力。氮化镓HEMT在快速充电应用中已被证明优于硅基超结MOSFET和射频器件中的砷化镓HEMT的性能，这带动了此类器件快速增长的需求。Yole Development预测氮化镓功率器件市场未来5年的年复合增长率将超过50%。 尽管氮化镓器件正在被逐步采用，氮化镓HEMT制造中独有的技术挑战亟需解决，以进一步提升器件性能和可靠性、生产力和良率。 例如刻蚀工艺需要超低表面损伤、具有原子级精度的高选择性。泛林集团正在将稳态工艺与脉冲等离子和原子层刻蚀工艺相结合优化，用于经过生产验证的高量产的工艺模块中。 除了刻蚀工艺的挑战，还有很多其他等离子体沉积和清洗工艺步骤对提升氮化镓器件的性能也非常关键。尤其是氮化镓晶体管栅极的钝化，低等离子体损伤的高质量钝化层的优化可以使器件性能得到大幅提升。因此，我们正在使用泛林的单晶圆清洗解决方案来优化钝化工艺以及在此之前的晶圆表面清洗。 硅基氮化镓技术的关键潜在优势之一在于将其整合到CMOS晶圆厂和代工厂的制程中，与硅器件进行异构集成。不过这对工艺提出了新的需求，即控制晶背和晶圆边缘的镓沾污。泛林集团也在将我们的单晶圆清洗和晶圆边缘的工程经验带到氮化镓器件的制造中。 在泛林，我们专注于硅基氮化镓HEMT和用于功率管理应用的单片集成IC器件。我们已经将经验应用于关键的硅基氮化镓射频应用和其他例如微型LED之类的基于氮化镓的器件。在本文中，我们将分享支持氮化镓器件制造而开发的解决方案以及它们给客户带来的益处。 |
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