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Deposition of Metal Polymers on Photoresist from Dry Metal Etching
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Chong Wei Chun, X-FAB Sarawak Sdn. Bhd.
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An Alternative Way to Achieve High Removal Rate of TiN MHM with Good Uniformity in Wet Etch
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Xiang MingYuan, Lam Research
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A novel two-step approach to improve depth uniformity in trench etching for power device application
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Tianbai Xu, Advanced Micro-Fabrication Equipment Company Inc
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Micro Trench Formation during Plasma Etching
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Hu Zhou, Advanced Micro-Fabrication Equipment Company Inc.
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Metal Hard Mask Open Process Window Enhanced by Insertion of Polymer Deposition
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Li Fei Sun, Lam Research Service Co., Ltd
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Application of a Bevel Etch Process for Improving Particle Performance in CMOS Image Sensor Manufacture
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Sun Yiling, Lam Research Corporation
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RF technologies for Ion energy distribution control in ICP etchers
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Kui Zhao, AMEC
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SILICON WAFER THINNING PROCESS BY DRY ETCHING WITH LOW ROUGHNESS AND HIGH UNIFORMITY
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Zihan Dong, Renzhi Yuan, Yuanwei Lin, NAURA Technology Group Co., Ltd.
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Profile and Hard-mask Remaining Study for MRAM MTJ Ion Beam Etching
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Caigan Chen, Lam Research
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Improvement research of round convex residue in dual gate layer
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Mingguang Hang, Lili Jia, Fang Li, Jun Huang, Wenyan Liu, Hong Li, XinHao Wu, Zhongyuan Liu, HLMC
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Advantage Timely Energized Bubble Oscillation Megasonic Nano-spray method to eliminate surface particle defect in lightly Doped Drain 28nm
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Li Hong, Fang Li, Wenyan Liu, Jun Huang, Yu Zhang, HLMC
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Optimization of 28nm SiGe Sigma Shape Trench Depth Loading Effect
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Lili Jia, Wenyan Liu, Fang Li, Jun Huang, HLMC
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Well CD Control and Vertical Profile BARC Etch Development and Related Theory Research
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Jiang linpeng, Shanghai Huali Integrated Circuit Corporation
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Impact Of Rework Process to Etch Bias And The Corresponding Solution
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Pengkai Xu, ShangHai HuaLi Microelectronics Corporation
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Novel Method Achieved Much Better Sidewall Protection by in Situ ALD Process in Plasma Etch Chamber for 3D NAND
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Stephen Liou, Lam Research
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A study in 2-D NAND Flash 19nm Gate Etch Process for the balance between profile and free fence &pitting
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REN JIA, SHANGHAI HUALI MICROELECTRONICS CORPORATION
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The Development and Application of Teflon coating in ETCH Chamber
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Guilin Yang, Advanced Micro-Fabrication Equipment Inc.
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Pulsing Plasma in CD Profile and Depth Control
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Sha-Sha Wang, Applied Materials
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Pulsing Plasma Application for Controllable Profile and Microscopic Uniformity
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Kejun Zhang, Applied Materials
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Rectangular suspended single crystal Si nanowire with (001) planes and direction developed via TMAH wet chemical etching
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Shuang Sun, Peking University
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Manipulation of etch uniformity of ICP etchers through IED control
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Shiliu Yin, AMEC
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Study of 28nm SiGe Sigma Cavity Silicon Trench Formatio
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Li Fang, Liu Wenyan, Jia Lili, Shanghai Huali Integrated Circuit Manufacturing Corporation
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Profile Modification in a High Aspect Ratio Carbon Mask Open Process
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Tianyin Sun, Lam Research
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Effective Lithography Leveling Improvement was Achieved by Retaining Wafer Back-surface Nitride During a Novel SMT Nitride Remove Process
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Weiwei Ma, Shanghai Huali Integrated Circuit Corporation
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A study on improving dual gate rework reliability through single wet strip process
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Yan Yu, Shanghai Huali Integrated Circuit Corporation
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Improved Selective Silicon Nitride Etch for Advanced Logic and Memory Applications
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Chien-Pin Sherman Hsu, Avantor
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RPG Barc Etch Challenge and Solution in FinFET Structure below 7nm
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Jenny Zhang, AMEC
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Characterization and Optimization of GaN Layer Etch
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Jiale Tang, Jiangsu Normal University
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Study of the Damage Free Dual-fluid Spray Cleaning Nozzle and Cleaning Method
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Xiangxin Li, NAURA
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Influence of Chamber Clean Condition in Poly Silicon Plasma Etching
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Ke Liu, NAURA
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Silicon Etch for FinFET Devices of 14nm and Beyond Using NMC612D Tool
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Guang Yang, NAURA
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The Solution of AIO-ET Via Open and Process Window Improvement
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Baichun Zhang, Shanghai Huali Microelectronics Corporation
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The Solution of Contact Etch Open Short
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RenHui Xu, Shanghai Huali Microelectronics Corporation
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Optimized Work Function Metal Layer Damage Effect in Metal Gate BARC Etch Process by ICP Etch System
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Kai Qian, Shanghai Huali Microelectronics Corporation
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Oxide to CESL Selectivity Enhancement by AlE in Contact Etch
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Hexin Zhou, Lam Research
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