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Chinese
2020年6月27-29日
上海新国际博览中心

Symposium III: Dry &Wet Etch and Cleaning


(** to designate keynote talk, * to designate invite talk)

Sunday, March 15, 2020 Shanghai International Convention Center

Joint Session: Symposium II and Symposium III-Lithography/Etch
Meeting Room:5th Floor Yangtze River Hall
Session Chairs: Kafai Lai & Ying Zhang

13:30-13:35 Opening Remarks
  Kafai Lai / Ying Zhang
**13:35-14:05 TBD
  Shingo Yoshikawa, DNP
**14:05-14:35 Advanced Memory Patterning Challenges and Perspective Solutions
  Jeongdong Choe, DRAM
**14:35-15:05 The Law that Guides the Development of Photolithography Technology and the Methodology in the Design of Photolithographic Process
  Qiang Wu, ICRD
15:05-15:20 Coffee Break
 

Session II: Advanced Patterning
Meeting Room: 3C+3D
Session Chair: Ying Zhang

 
*15:20-15:50 Advanced patterning, scaling boosters, and DTCO
  David Xiao, IMEC
*15:50-16:20 Patterning challenges and perspective solutions for advanced technology nodes
  Da Yang, TEL, US
*16:20-16:50 Memory Patterning
  Ying Huang, AMAT, US
   

Monday, March 16, 2020 Shanghai International Convention Center
Meeting Room: 3C+3D

Session III: FEOL/MOL Etching
Session Chair: Tom Ni


08:45-09:00 Optimization of the CD uniformity (CDU) in mandrel etching process for 5nm Fin SAQP Process Flow
  Yushu Yang, Shanghai IC R&D Center
*09:00-09:30 Patterning of 3D Fin-Gate features at deeply scaled dimensions
  Liping Zhang, IMEC
*09:30-10:00 14nm Fin SADP Patterning Processes and Process Integration
  Chunyan Yi, Shanghai IC R&D Center
10:00-10:15 Coffee Break
   

Session IV: Resists Etch and Wet Etch/Clean
Session Chair: Tom Ni


*10:15-10:45 Etch Challenges and Solutions in Si Trench Etch for Power Devices
  Shenjian Liu, AMEC
*10:45-11:15 Highly Selective Radical Etching
  Hua Chung, Mattson, US
11:15-11:30 Towards Microstructures with Ultrahigh Aspect-Ratio and Verticality in Deep Silicon Etching
  Yuanwei Lin, NAURA
11:30-11:45 Critical Plasma Etch Processing of Wide Bandgap Materials for Power and RF Device Manufacturing
  Dave Thomas, SPTS Technologies Ltd
11:45-12:00 The Solution of AIO-ET Via Open and Process Window Improvement
  Baichun Zhang, Shanghai Huali Microelectronics Corporation
12:00-13:30 Lunch Break
   

Session V: BEOL Etching and Memory Etch
Session Chair: Jianping Zhao


*13:30-14:00 Challenges and Solutions in perpendicular STT-MRAM manufacturing
  Dongchen Che, Leuven Instruments
14:00-14:15 The solution of contact etch open short
  RenHui Xu, Shanghai Huali Microelectronics Corporation
14:15-14:30 TiN MHM AIO challenge and AMEC solution
  Michael Tsai, AMEC
14:30-14:45 Optimized Work Function Metal Layer Damage Effect in Metal Gate BARC Etch Process by ICP Etch System
  Kai Qian, Shanghai Huali Microelectronics Corporation
14:45-15:00 Highly Selective SiO2 Etching Employing Inductively Coupled Plasma
  Kun Zhang, Advanced Micro-Fabrication Equipment Company Inc.
15:00-15:15 Monitor and Reduction of Particles in Inductively Coupled Plasma Etch
  Jenny Zhang, AMEC
15:15-15:30 Coffee Break
   

Session VI: ALE and Patterning
Session Chair: Yahui Huang


*15:30-16:00 Innovative Future Etch Technology by Atomic-order control
  Yoshihide Kihara, TEL, Japan
*16:00-16:30 Quasi-Atomic Layer Etching Technology for High Uniformity Etching Applications
  Yiming Zhang, NAURA
16:30-16:45 Analysis of Linewidth Uniformity, Line Edge/Width Roughness, and Overlay Budget of SAQP Process in a 5 nm Logic Process
  Bowen Wang, Shanghai IC R&D Center
16:45-17:00 Understanding the Cooling and Particulate Challenges for Next Generation Atomic Layer Etch Technologies
  Rajesh Melkote,Edwards Vacuum, LLC
17:00-17:15 Chemistry limitation and optimization for FINFET surface modification minimization during IMP BARC etch 
  Chiao-Tzu Wang, AMEC
   
Poster Session: Location: 5th Floor
Coffee Break Deposition of Metal Polymers on Photoresist from Dry Metal Etching
  Chong Wei Chun, X-FAB Sarawak Sdn. Bhd.
  An Alternative Way to Achieve High Removal Rate of TiN MHM with Good Uniformity in Wet Etch
  Xiang MingYuan, Lam Research
  A novel two-step approach to improve depth uniformity in trench etching for power device application
  Tianbai Xu, Advanced Micro-Fabrication Equipment Company Inc
  Micro Trench Formation during Plasma Etching
  Hu Zhou, Advanced Micro-Fabrication Equipment Company Inc.
  Metal Hard Mask Open Process Window Enhanced by Insertion of Polymer Deposition
  Li Fei Sun, Lam Research Service Co., Ltd
  Application of a Bevel Etch Process for Improving Particle Performance in CMOS Image Sensor Manufacture
  Sun Yiling, Lam Research Corporation
  RF technologies for Ion energy distribution control in ICP etchers
  Kui Zhao, AMEC
  SILICON WAFER THINNING PROCESS BY DRY ETCHING WITH LOW ROUGHNESS AND HIGH UNIFORMITY
  Zihan Dong, Renzhi Yuan, Yuanwei Lin, NAURA Technology Group Co., Ltd.
  Profile and Hard-mask Remaining Study for MRAM MTJ Ion Beam Etching
  Caigan Chen, Lam Research
  Improvement research of round convex residue in dual gate layer
  Mingguang Hang, Lili Jia, Fang Li, Jun Huang, Wenyan Liu, Hong Li, XinHao Wu, Zhongyuan Liu, HLMC
  Advantage Timely Energized Bubble Oscillation Megasonic Nano-spray method to eliminate surface particle defect in lightly Doped Drain 28nm
  Li Hong, Fang Li, Wenyan Liu, Jun Huang, Yu Zhang, HLMC
  Optimization of 28nm SiGe Sigma Shape Trench Depth Loading Effect
  Lili Jia, Wenyan Liu, Fang Li, Jun Huang, HLMC
  Well CD Control and Vertical Profile BARC Etch Development and Related Theory Research
  Jiang linpeng, Shanghai Huali Integrated Circuit Corporation
  Impact Of Rework Process to Etch Bias And The Corresponding Solution
  Pengkai Xu, ShangHai HuaLi Microelectronics Corporation
  Novel Method Achieved Much Better Sidewall Protection by in Situ ALD Process in Plasma Etch Chamber for 3D NAND
  Stephen Liou, Lam Research
  A study in 2-D NAND Flash 19nm Gate Etch Process for the balance between profile and free fence &pitting
  REN JIA, SHANGHAI HUALI MICROELECTRONICS CORPORATION
  The Development and Application of Teflon coating in ETCH Chamber
  Guilin Yang, Advanced Micro-Fabrication Equipment Inc.
  Pulsing Plasma in CD Profile and Depth Control
  Sha-Sha Wang, AMAT
  Pulsing Plasma Application for Controllable Profile and Microscopic Uniformity
  Kejun Zhang, AMAT
  Rectangular suspended single crystal Si nanowire with (001) planes and direction developed via TMAH wet chemical etching
  Shuang Sun, Peking University
  Manipulation of etch uniformity of ICP etchers through IED control
  Shiliu Yin, AMEC
  Study of 28nm SiGe Sigma Cavity Silicon Trench Formatio
  Li Fang, Liu Wenyan, Jia Lili, Shanghai Huali Integrated Circuit Manufacturing Corporation
  Profile Modification in a High Aspect Ratio Carbon Mask Open Process 
  Tianyin Sun, Lam Research
  Effective Lithography Leveling Improvement was Achieved by Retaining Wafer Back-surface Nitride During a Novel SMT Nitride Remove Process 
  Weiwei Ma, Shanghai Huali Integrated Circuit Corporation
  A study on improving dual gate rework reliability through single wet strip process 
  Yan Yu, Shanghai Huali Integrated Circuit Corporation
  Improved Selective Silicon Nitride Etch for Advanced Logic and Memory Applications 
  Chien-Pin Sherman Hsu, Avantor
  RPG Barc Etch Challenge and Solution in FinFET Structure below 7nm 
  Jenny Zhang, AMEC
  Characterization and Optimization of GaN Layer Etch 
  Jiale Tang, Jiangsu Normal University
  Study of the Damage Free Dual-fluid Spray Cleaning Nozzle and Cleaning Method 
  Xiangxin Li, NAURA
  Influence of Chamber Clean Condition in Poly Silicon Plasma Etching 
  Ke Liu, NAURA
  The silicon profile tuning in Fin etch
  Guang Yang, NAURA