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Session I: Lithograpy/Etch joint session (II & III)
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**
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DRAM, NAND, and Emerging Memory Technology Update
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Jeongdong Choe, TechInsights
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**
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The Law that Guides the Development of Photolithography Technology and the Methodology in the Design of Photolithographic Process
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Qiang Wu, Shanghai IC R&D Center
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Session II: Computational Lithography
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*
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Accurate etch modeling with high-volume metrology and deep-learning technology
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Wei Yuan, ICRD
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Fast and Accurate Machine Learning Inverse Lithography Using Physics Based Feature Maps and Specially Designed DCNN
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Xuelong Shi, ICRD
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Accurate mask model approaches for wafer hot spot prediction and verification
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Young Mog Ham, Photronics
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Etch Model Based on Machine Learning
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Rui Chen, IMECAS
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A Simulation Study for Typical Design Rule Patterns and the Photo Absorption Stochastics and Deffectivity Mpdel in a 5NM Logic Process with EUV Lithography
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Yanli Li, ICRD
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Parallel Session
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Mitigation of microbridging defects in EUV lithography through advanced filtration technologies
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Toru Umeda, Nihon Pall Ltd.
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Development of 90 nm & 5 nm patterning materials for lithographic technology
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Hai Deng, Fudan University
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Session III: DTCO Joint session ( II & IX)
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**
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Monolithic 3D enabled Processing-in- SRAM Memory
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Vijaykrishnan Narayanan, Pennsylvania State University
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**
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Reduction of Systematic Defects Through Machine Learning from Design to Fab
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James Word, Mentor Graphics
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**
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Full Chip Curvilinear ILT in a Day
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Leo Pang, D2S
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Session IV: Multiple patterning
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*
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A Study of Image Contrast, Stochastic Defectivity, and Optical Proximity Effect in EUV Photolithographic Process under Typical 5 nm Logic Design Rules
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Qiang Wu, ICRD
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The topography effect on the lithography patterning control for VLSI fabrication
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Dongyu Xu, Huali
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Session V: Tool, Mask & Metrology
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**
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Challenge of High Power LPP-EUV Source with Long Collector Mirror Lifetime for Semiconductor HVM
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Hakaru Mizaguchi, Gigaphoton
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*
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Line Width and Roughness Measurement of Advanced FinFET Features by Reference Metrology
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Mamsami Ikota, Hitachi High Tech
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High Speed Wafer Geoemtry on Silicon Wafers Using Wave Front Phase Imaging for Inline Metrology
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Jan Gaudestad, Wooptix
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Session VI: Process & Material
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How to improve' Chemical Stochastic' in EUV lithography ?
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Toru Fujimori, Fujifilm Corp.
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*
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Rigorous VASE Data Fitting Ultrathin Film Measurement
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Zhimin Zhu, Brewer Science
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