Symposium I: Device Engineering and Memory Technology

Symposium Committee

Dr. Ru HUANG
Chair
Peking University , China
   
Dr. Cor Claeys
Co-Chair
KU, Leuven, Belgium
   
Dr. Minhwa Chi
Co-Chair
SVP/TD, SiEn (Qindao) Integrated Circuits Co., China
   
Dr. Chung Lam
Co-Chair
Jiangsu Advanced Memory Technology Co. Ltd., China
   
Prof. Jong-Ho Lee
Co-Chair
Seoul National University, Korea
   
Prof. Ming Liu
Co-Chair
IME, CAS, China
   
Prof. Yuchao Yang
Member
Peking University, China
   
Dr. Wensheng Qian
Member
HHGrace, China
   
Dr. Huiling Shang
Member
TSMC
   
Dr. Zhiqiang Wei
Member
Panasonic, Japan
   
Dr. Hong Wu
Member
SMIC, China
   
Prof. Huaqiang Wu
Member
Tsinghua University
   
Dr. Frank Bin Yang
Member
Qualcomm, USA
   
Prof. Mario Lanza
Member
the King Abdullah University of Science and Technology (KAUST), Saudi Arabia
   
Prof. Xinran Wang
Member
Nanjing University, China
   
Prof. Ming Li
Member
Peking University, China
   
Prof. Peng Zhou
Member
Fudan Univeristy, China
   
Dr. Bin Yu
Member
Zhejiang Univeristy, China
   

Symposium I: Device Engineering and Memory Technology

  •  Advanced MOS devices
  •  Memory devices (DRAM, SRAM, Flash, emerging memory devices)
  •  Device reliability
  •  Mobility enhancement technology
  •  Shallow junction formation
  •  Source/drain engineering (silicide/salicide)
  •  RF/HV/Power devices
  •  Other emerging devices