Symposium I: Device Engineering and Memory Technology

Symposium Committee

Dr. Ru HUANG
Chair 		Southeast University , China
   
Dr. Cor Claeys
Co-Chair 		KU, Leuven, Belgium
   
Dr. Minhwa Chi
Co-Chair 		SVP/TD, SiEn (Qindao) Integrated Circuits Co., China
   
Dr. Chung Lam
Co-Chair 		Jiangsu Advanced Memory Technology Co. Ltd., China
   
Prof. Jong-Ho Lee
Co-Chair 		Seoul National University, Korea
   
Prof. Ming Liu
Co-Chair 		Fudan University, China
   
Prof. Yuchao Yang
Co-Chair 		Peking University, China
   
Dr. Wensheng Qian
Member 		HHGrace, China
   
Dr. Huiling Shang
Member 		TSMC
   
Dr. Zhiqiang Wei
Member 		Avalanche Technology
   
Dr. Hong Wu
Member 		SMIC, China
   
Prof. Huaqiang Wu
Member 		Tsinghua University
   
Dr. Frank Bin Yang
Member 		Qualcomm, USA
   
Prof. Mario Lanza
Member 		the King Abdullah University of Science and Technology (KAUST), Saudi Arabia
   
Prof. Xinran Wang
Member 		Nanjing University, China
   
Prof. Qianqian Huang
Member 		Peking University, China
   
Prof. Peng Zhou
Member 		Fudan Univeristy, China
   
Dr. Bin Yu
Member 		Zhejiang Univeristy, China
   

Symposium I: Device Engineering and Memory Technology

  •  Advanced MOS devices
  •  Memory devices (DRAM, SRAM, Flash, emerging memory devices)
  •  Device reliability
  •  Mobility enhancement technology
  •  Shallow junction formation
  •  Source/drain engineering (silicide/salicide)
  •  RF/HV/Power devices
  •  Other emerging devices