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Dr. Hongxiang Mo, Director of GHS, he leads the device and element design team in TD focus on logic devices, SRAM, eFuse, and NOR flash memory devices development. Dr. Mo received his bachelor's and master's degrees from Fudan University in dept of Electronic Engineering in 1996 and 1999 respectively, and his Ph.D. in Electrical and Computer Engineering from North Carolina State University in 2004. Since then, he has worked in the field of integrated circuit R&D for more than 20 years. He has been engaged in research on logic devices and integration at SMIC, Global Foundries, and Intel. His research areas include advanced logic devices from 65nm to FinFET, as well as NOR and 3D NAND flash memory products. He has published many papers at international conferences and patents.
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