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Chao GAO / 高超
...resented. Technical progress of 200 mm SiC substrate in volume product...
Basic page - 2024-12-30 14:59:17.0
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Mr. YuJie Xu
... Fudan University, China 1999-2002 M.S. in Physical Electronics, Fu...
Basic page - 2025-01-07 11:34:57.0
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Compound Semiconductor Asia Conference (CS Asia) 2025
...,宜普电源 16:00-16:30 200mm SiC Substrate Development and 30...
Basic page - 2025-03-25 21:22:39.0
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SEMICON China 2025 Concurrent Events At Glance
...erences in China and Asia since 2000. Organized by SEMI and IEEE-EDS, ...
Basic page - 2024-12-03 15:29:58.0
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黄海宾
...工作,将其价格降到了8000万元/GW。带领团队申请专利/软著等200多项;发表论文50多篇。主编了《热丝化学气相沉积技术》《光伏物理与太阳...
Basic page - 2025-05-14 10:15:12.0
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Mr. Xie Zhuo
...Shanghai Jiaotong University in 2006. He has 18 years of experience in...
Basic page - 2024-12-05 00:10:31.0
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Wenjing Wang 王文静
... 25.6%。近年来承担国家及省部级课题 20 余项,发表论文 200 余篇,申请专利 50 余项,出版论著和报告九本。
Basic page - 2025-05-14 13:15:17.0
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Dr. Tony Tae-Hyoung Kim
...sity, Seoul, Korea, in 1999 and 2001, respectively. He received the Ph...
Basic page - 2024-12-26 16:03:55.0
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Prof. Cheng Liu
...rbin Institute of Technology in 2009 and 2007, respectively. His resea...
Basic page - 2024-12-19 12:22:36.0
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Shunfeng LI / 李顺峰
...te of Semiconductor in 1997 and 2001. respectively. In 2005, he got do...
Basic page - 2024-12-30 15:41:28.0