Prof. Xuefei Li

Huazhong University of Science and Technology

Dr. Xuefei Li received his PhD from Nanjing University in 2013. His research interests include the growth, physical properties, and device applications of two-dimensional materials. He serves as a Guest Editor for the collection “2D Materials for Integrated Electronics” in npj 2D Materials and Applications. He demonstrated the first negative differential resistance (NDR) effect in n-type MoS2 transistor due to self-heating and developed the world's first ballistic p-type WSe2 field-effect transistor.