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Xiuyan Li is a Professor in the School of Integrated Circuit, Shanghai Jiao Tong University. She got her Ph.D degree in Material Engineering from The University of Tokyo, Japan, in 2015. After that, she was a post-doctoral at Rutgers University, USA. Then, she joined Shanghai Jiao Tong University from 2018 as an Associate Professor and she became a Full Professor in 2025. Her research interests include device physics and materials engineering for advanced MOS and memory technologies. So far, she published more than 50 papers in journals like Nature Communications, IEEE Electron Device Letters and Applied Physics Letters, as well as in conferences like IEDM, EDTM and SSDM.
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