Symposium Chair: Dr. Xiaoping Shi, Akrion Italy
| ** | to designate keynote talk - 30 min | |||
| * | to designate invite talk - 25 min | |||
| to designate regular talk - 15 min |
Sunday, March 22, 2026, Kerry Hotel Pudong, Shanghai
Meeting Room: Shanghai Ballroom 3
Session I: Device Integration I
Session Chair: Xiaoping Shi
| **13:15-13:45 | Low Dimensional Materials and Devices for Advanced Node Technology |
| Han Wang, University of Hong Kong | |
| **13:45-14:15 | New Advances in large-size GaN Epitaxial Materials |
| Kai Cheng, Enkris Semiconductor | |
| *14:15-14:40 | High-Performance Optical Transmission Chip Based on Thin-Film Lithium Niobate |
| Liu Liu, Zhejiang University | |
| *14:40-15:05 | Selective Area Deposition of 2D Semiconductors and Transistor Integration |
| Yuanyuan Shi, University of Science and Technology of China (USTC) | |
| *15:05-15:30 | Enabling the continuous scaling of advanced CMOS image sensor |
| Yunpeng Ying, Lam Research | |
| 15:30-15:45 | The Effect of Amorphization Formation under Different Temperature Conditions in Cold Implant Process |
| Yi-Long Chen, GHS Semiconductor Co., Ltd | |
| 15:45-16:00 | Study on Furnace-based ALD SIN Formation Process and Film Quality Improvement |
| Yafang Luo, NAURA | |
| 16:00-16:15 | The Work Function Adjustment of the Reactive Sputtering Deposition TiN Process |
| Gang Song, Beijing Superstring Academy of Memory Technology | |
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| 16:30-18:00 | Panel Discussion (Meeting Room: Pudong Ballroom 1) |
Monday, March 23, 2026, Kerry Hotel Pudong, Shanghai
Meeting Room: Shanghai Ballroom 3
Session II: Device Integration II
Session Chair: Chao Zhao
| **08:30-09:00 | Opportunities for CMOS Logic Technology with Dual-sided Integrations: From Lateral to Vertical Transistors |
| Heng Wu, Peking University | |
| *09:00-09:25 | Stacked Vertical Flash with Single-Crystal-Si Channel and Its Applications |
| Huilong Zhu, Beijing X2Chip Technologies | |
| *09:25-09:50 | From FinFET to GAA and CFET: a Comparison Study on the DC and AC Performance |
| Xiaona Zhu, Fudan University | |
| *09:50-10:15 | Application of Aberration-Corrected (AC) STEM for the Failure Analysis of Semiconductor Devices |
| Binhai Liu, Wintech-Nano | |
| 10:15-10:30 | A Dynamic Tunable Optical Color Filter Layer by PEALD Laminated SiOx/TiOx for Advanced CMOS Image Sensor |
| Yuexiang Sun, Advanced Micro-Fabrication Equipment Inc. (AMEC) | |
| 10:30-10:45 | Coffee Break |
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Session III: FEOL Development I
Session Chair: Yunlong Li
| *10:45-11:10 | AI-assisted TCAD automatic calibration solution |
| David Yuan, GHS Semiconductor | |
| *11:10-11:35 | Basic principle and application of surface carbon clean system |
| Han Wang, Beijing NAURA Technology Group Co., Ltd | |
| *11:35-11:50 | INVESTIGATION OF THE BAKING PROCESS ON THE SUBSTRATE INTERFACE AND THE EPITAXIAL GROWTH |
| Yiqun Liu, SUPERALD | |
| 11:50-12:05 | WCVD Stress Impact on Gate Performance |
| Tristan Yang, Lam Research | |
| 12:05-13:30 | Lunch Break |
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Session IV: Packaging Process Development
Session Chair: Jianhua Jv
| *13:30-13:55 | PVD Solutions for Panel-Level Advanced Packaging in Mass Production |
| Xiaojun Zhang, Arrayed Materials (China) Co., Ltd. | |
| *13:55-14:20 | Inter-Die-Gap-Fill (IDGF) in 3DIC Heterogeneous Integration: Challenges and Solutions |
| Ben Zongbin Wang, Applied Materials Singapore | |
| 14:20-14:35 | Opportunities and Challenges of Ultra-Thick Silicon Oxide Thin-Film Deposition Equipment in Advanced Packaging |
| Joe Li, Jiangsu Afilm Semiconductor Technology Co., LTD. | |
| 14:35-14:50 | Solution of High Aspect Ratio TSV PVD in Advanced Packaging |
| Tongwen Zhang, Advanced Micro-Fabrication Equipment Company Inc | |
| 14:50-15:00 | Coffee Break |
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Session V: BEOL Process development
Session Chair: Chenyu Wang
| *15:00-15:25 | Advanced Interconnects: Better than Cu |
| Yuan Tu, AtomSolve Technology Corp. | |
| 15:25-15:40 | Optimize Current Setting to Reduce Inter-Void Defects in Damascene Copper Interconnects |
| Kristoff Wang, Lam Research | |
| 15:40-15:55 | Applied Materials® CentinelTM ALD TiN for MIM Application |
| Guoqing Zhang, Applied Materials China | |
| 15:55-16:10 | Frequency-Tuned RF Power Effects on Plasma Stability in Reactive Sputtering: Validation by Unsupervised Learning Analysis of OES and Impedance Mapping Data |
| Cheng-Yuan Kao, National Central University | |
Tuesday, March 24, 2026, Kerry Hotel Pudong, Shanghai
Meeting Room: Function Room 4
Session VI: FEOL Process Technology II
Session Chair: Jiaxiang Nie
| *08:30-08:55 | Atomic Layer Deposition Process Technology: Fundamentals and Applications |
| Xun Gu, AMEC | |
| 08:55-09:10 | Influence of Fluorine Radicals from RPS and High-Temperature Environment on the Corrosion Performance of Double Remelted 316L Stainless Steel |
| Jiakun Zhu, Piotech | |
| 09:10-09:25 | Preparation and Property Tuning of VOx Film for Advanced Application Using Ion Beam Deposition |
| Zichao Li, Jiangsu Leuven Instruments Co. Ltd | |
| 09:25-09:40 | Synergistic Interface Engineering Enables HZO Capacitors with κ > 70, 0.4 nm EOT and Suppressed Leakage through Morphotropic Phase Boundary |
| Qiang Gao, Shanghai Jiaotong University | |
| 09:40-09:55 | The Influence of ISSG Hydrogen-To-Oxygen Ratio on the Growth of Tunnel Oxide for Nor Flash Memory Cycling Disturb Loss |
| Xin Wang, GHS Semiconductor | |
| 09:55-10:10 | Multi-scale model of HfO2 ALD for improvement of the on-wafer uniformity and the step coverage |
| Linlin Xiao, Suzhou STR Software Technology Co., Ltd. | |
| 10:10-10:30 | Break |
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Session VII: FEOL Process Development III
Session Chair: Xun Gu
| *10:30-10:55 | Advances in Atomic Layer Deposition Precursors for IC Applications |
| Xiabin Lou, Origin Materials Tehcnology Co., Ltd | |
| 10:55-11:10 | The Application of a new theory based on thermodynamics to explain the leakage current vs voltage and breakdown characteristics of TiN/ZAZ/TiN MIM capacitors used in DRAMs |
| Wai Shing Lau, Nanyang Technological University (Retired) | |
| 11:10-11:25 | Stress Analysis of STI Structure under Different Gap-Fill Material with Different Corner Rounding Conditions |
| Xiaoxin Li, Lam Research | |
| 11:25-11:40 | Study on the Improvement of Silicon Film Trench Fill Capacity and Uniformity |
| Ying Zhang, NAURA | |
| 11:40-11:55 | Investigation of WCxNy Thin Films as Al/F Barrier and W Nucleation Layers in Advanced Logic |
| Jiaxing Sun, AMEC | |
| 11:55-12:10 | ALD TiN Step Coverage Improvement for Ultra-high AR |
| Guobiao Xue, Piotech | |
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| Poster Session: Monday, March 23, 16:00-18:00 | |
| Removing PECVD Fluorine Residues of Rluorinated Plasma Clean by In-Situ NH3+N2O Plasma | |
| Xin Xu, Lam Research | |
| Study of Film Discoloration and Moisture Influence in Plasam-Enhanced Sub-Atomsphericic Deposition | |
| Hui Li, Piotech | |
| Optimization of STI bottom Corner Rounding by In-situ Steam Generation Process in 50nm Device | |
| Yuanfeng Xu, GHS Semiconductor Co., Ltd. | |
| Studies of Hydrogen Content and Annealing Effects of High-Density Plasma Chemical Vapor Deposition Silicon Dioxide Film | |
| Zhengyang Liu, Lam Research | |
| Backside Deposition Solution for Improved SACVD Film Uniformity | |
| Yicheng Xie, Lam Research | |
| Improvement of Thickness Uniformity and Surface Roughness in PECVD SiN Waveguides | |
| Kang Lin, Lam Research | |
| Chemical Bonding at the Graphene Films/Cu Substrate Interface for High-Efficiency Heat Dissipation | |
| Chenfei Zhou, Suzhou Polytechnic University | |
| Plasma-Assisted Surface Modification for Improved Passivation on Low Temperature PECVD Oxide Film | |
| Xinchen Cai, Tsinghua University | |
| Research and Improvement Solutions for Spacer Sidewall Defect Issues in 40nm Stress Memorization Technique Process Optimization | |
| Jian Zhu, 上海华力微电子有限公司 | |
| Stress-Tunable Flowable CVD Process via Gas Composition Modulation and Multi-Stage UV Cure for Strain Engineering in Fin Structures | |
| Longqing Mi, Piotech (Shanghai) | |
| Study of Surface Treatment Impacting High-K Film Properties with ALD Method | |
| Yanwen Luo, Piotech (Shanghai) | |
| Mask-Less Fabrication of Silicon Through-Via Structure in Nanoscale | |
| Yuanwei Lin, NAURA | |
| Applied Materials® Endura Execta PVD Aluminum Chamber CIP Package for Tool Output Improvement | |
| Qijian Deng, Applied Materials | |
| ECVD SiO2 Hard Mask Quality Improvement by Plasma Optimization | |
| Dandan Qi, Lam Research | |
| Kinetic Analysis of Interdiffusion Across SiO₂/IGZO and HfO₂/IGZO Interfaces for 3D DRAM Integration | |
| Dingting Han, Beijing Superstring Academy of Memory Technology | |
| Optimization of Germanium Epitaxial Process based on Silicon-Germanium Detectors within the Fab's 12-inch Production Line | |
| Xuankai Fang, Zhejiang University | |
| Research and Improvement of Low-k Arcing in 28 nm Technology | |
| Li Zhang, HLMC | |
| Research on Zero Mask Reduction Technology Based on 55HV Platform | |
| Xiuchun Wu, Shanghai Huali Microelectronics Corporation | |
| Modeling Study of SiGe/Si EPI Interface Quality | |
| Hao Fu, Suzhou STR Software Technology Co., Ltd. | |
| ILD0 Gap-fill Improvement through Integration Optimization | |
| Yiyu Zhang, Applied Materials China | |
| Continuous Particle Performance Improvement for Silicon Nitride Film_Fangfang Zheng | |
| Fangfang Zheng, Applied Materials China | |
| Applied Materials® High Deposit Rate Al Chamber for Power Metal Layer | |
| Jian Hua, Applied Materials China | |
| DIT Improvement Achieved through the Application of DTI Liner Processed by DPO in CIS Devices | |
| Heping Du, Applied Materials China | |
| Yield Improvement by HDP Process and Hardware CIP | |
| Wei Xiong, Applied Materials China | |
| Applied Materials ® Volaris Preclean Chamber to Improve UBM-Al Contact Resistivity for Advanced Package | |
| Rui Tian, Applied Materials China | |
| Applied Materials® DS TaN High Flow New CIP Recipe for NU% Improvement | |
| Xianzhen Zhang, Applied Materials China | |
| DPN and HTO Process on Gate Oxide in SiC MOSFET Mobility Improvement | |
| Yulong Liu, Applied Materials China | |
| Analysis and Resolution of Cracking in Passivation HDP USG Layers | |
| Congcong Zhao, Applied Materials China | |
| HDPCVD Inline WAT Improvement with Extended Process Window | |
| Chao Zheng, Applied Materials China | |
| Incorporated Oxygen-Rich Precursor to Improve SiH4-based FSG Film Stability | |
| Xiaoying Wang, Applied Materials China | |
| A Novel Method of Improving HDP STI IPM Gap-fill Ability in Deep Trench | |
| Xuecheng Zheng, Applied Materials China | |
| Successful Profile Match between VIISta™ 900 3D and Batch Tool for GaN Device Production | |
| CHUNHAO LIU, Applied Materials China | |
| Applied Materials® CentinelTM ALD TiN for MIM Application | |
| Guoqing Zhang, Applied Materials China | |
| The Application of Applied Materials® ImpulseTM TaOx Chamber in ReRAM | |
| Yue Yang, Applied Materials China | |
| CIP Process Development for HiK Capping Layer Using Applied Materials® AvenirTM LP RF PVD | |
| Weiming Yan, Applied Materials China | |
| Contact Barrier Extended to N28+ with Applied Materials® TxZTM CVD TiN Hardware CIP | |
| Bin Hu, Applied Materials China | |
| Alternative TiN Process for MG Al Barrier Application | |
| Dongdong Wei, Applied Materials China | |
| Innovative Surface Preparation Strategy for Enhancing RC Delay in Co Silicide Applications | |
| Wuxiang Li, Applied Materials China | |
| Wide Applications of Applied AvenirTM RF PVD Chamber in Logic Devices | |
| Zhen Chen, Applied Materials China | |
| Applied Materials® Endura™ System PBI Feature for High Uptime Improvement | |
| Yanqi Liu, Applied Materials China | |
| Systematic Modeling and Total Solution for the Wafer Sliding of APF Hardmask Films | |
| Rongrong Tian, Applied Materials China | |
| Applied Materials® VersaTM Chamber Development for TIN Heater in Silicon Photonics | |
| Ling Li, Applied Materials China | |
| Applied Materials® Endura2™ System Load Lock Recipe CIP For Local Stress Improvement | |
| Jie Zhang, Applied Materials China | |
| Applied Materials® ILB System Application in BEOL Liner and Barrier of Cu-W Scheme | |
| Xi Wu, Applied Materials China | |
| Anode Reflectivity Improvement in Micro-OLED | |
| Zhenxu Chen, Applied Materials China | |
| Transient Enhanced Diffusion Mitigation with Spike Tres Adjustment | |
| Jie Zuo, Applied Materials China | |
| Investigation of The Baking Process on the Substrate Interface and the Epitaxial Growth | |
| Yiqun Liu, SUPERALD | |
| Wet Etch Rate (WER) Improvement on HDP USG Process | |
| Zhuxin Fan, Lam Research | |
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