| Power & Compound Semiconductor Forum |
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| Date: | March 15-16, 2017 | ||
| Venue: | Pudong Ballroom 4, Kerry Hotel Pudong, Shanghai | ||
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Chinese and English Simultaneous Interpretation will be provided | ||
Important Notice: This is a two-day conference. You can attend two-day conference when you choose any of them.
From the first generation of semiconductors produced on silicon wafers to the next generation of semiconductors produced on GaAs wafers, the industry is now ramping up and investing in a third generation of semiconductors based on SiC and GaN-based wafer technologies. These Wide Band Gap (WBG) materials will have an increasing effect on society and technology for both power and compound semiconductor device applications. These applications include semiconductor lighting, laser, display, mobile communications, consumer electronics, green energy, modern transportation, and others that will impact and improve many aspects of society.
To meet the industry’s demand for critical insight and information for these emerging trends, SEMI China has combined two previously separate events, to create the comprehensive Power and Compound Semiconductor Forum. This forum, held in conjunction with SEMICON China 2017, will have four sessions: LED & Optoelectronics, Wide Band Gap Power Electronics, Compound Semiconductor in Communications, and Emerging Power Device Technology.
 
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Day1-Mar.15, 2017
*Session 1: LED & Optoelectronics ( Previously known LED China Conference)
*Session 2: Wide Band Gap Power Electronics
As representatives of WBG materials, both GaN and SiC have advantages in emerging device applications due to high saturated electron drift velocity, low dielectric constants, and high conductivities. The market potential for these material technologies is high in the application of power electronics given advantages of anti-radiation, high-frequency, high power, and high density integration.
Leading innovative companies in the WBG segment of semiconductor industry supply chain will present cutting-edge technology and the latest trends in power electronics applications.
Day2-Mar.16, 2017
*Session 3: Compound Semiconductor in Communications
With the surge in intelligent mobile electronics across the global market over the past number of years, the compound semiconductor market has experienced accelerated growth. Over this timeframe, compound semiconductor companies have experienced rapid revenue growth. Chinese enterprises, however, have missed out on dividend growth in this growth market, so new strategies and incentives are urgently needed to further develop the local China supply chain in this ever important industry segment.
Opportunities for GaAs, GaN and other compound semiconductor technologies include wireless networking, satellite navigation, automotive electronics, and IoT applications, all of which will be discussed in this session.
*Session 4: Emerging Power Device Technology
Power semiconductors are rapidly developing towards higher power, improved gate driver performance, and higher frequency applications. Through innovation of IGBT, MCT, IEGT, SiC and MOSFET device technologies, higher requirements are needed on the materials and the semiconductor manufacturing process.
It will be a challenge to Chinese enterprises to
seize domestic market opportunities and close the gap between foreign incumbents,
such as Infineon, ABB, Rohm, and Toshiba. In this session, topics covered will
include integration design, manufacturing, packaging, and end-market applications
to explore industry opportunities and challenges.
Two-day registration fee:
| Type | Before Feb.20 with Advanced Payment(Early Bird) | After Feb.20 and On-site |
| Attendees | RMB 1,000 per person | RMB 1,500 per person |
| Speakers | Free | Free |
*Agenda is subject to change
Developed From:
For more information and sponsorship, please contact:
Daniel Qi
Chief Analyst | Industry Research and Consulting
Director | Power and Compound Semiconductor Industry
Tel: 86-21-60278576
Email: [email protected]