Frank Wischmeyer
Vice President, AIXTRON SE


Dr. Frank Wischmeyer is Vice President Marketing and Business Development for Power Electronics at AIXTRON SE. He is responsible for development programs with industrial and institutional partners in the field of GaN and SiC power semiconductors. From 2002 to 2013 he was Managing Director of EPIGRESS AB, a pioneer in commercial SiC Hot-Wall reactors and subsidiary of AIXTRON.

Dr. Wischmeyer has more than 20 years of experience in the field of SiC VPE technologies. He holds a PhD degree from Technical University of Darmstadt as well as a degree in physics from University of Osnabrueck, Germany.


GaN and SiC semiconductors have demonstrated their performance benefits and reliability in power electronics solutions and are getting adopted in consumer electronics, industrial and automotive applications. Vapor phase epitaxy (VPE) is a key technology for volume manufacturing of the semiconductor device stacks. In this presentation, we will report on recent advances of the GaN and SiC VPE production technology based on Planetary reactor as industry tool-of-record. Scaling of the SiC process to 8x150 mm per batch and generating throughput advantage by high SiC growth rate processes and wafer level automation is boosting the commercial viability of the SiC manufacturing process.