Biography Dr. Frank Wischmeyer is Vice President Marketing and Business Development for Power Electronic applications at AIXTRON SE, Germany. He is responsible for development programs with industrial and institutional partners in the field of GaN and SiC power device applications. From 2002 to 2013 he was Managing Director of Epigress AB, a Swedish subsidiary of AIXTRON, positioning the SiC Planetary Technology at leading SiC device and material manufacturers. Dr. Wischmeyer has more than 20 years of experience in the field of SiC VPE technologies. He received his PhD from the Technical University of Darmstadt, Germany, and is holding several patents in the field of SiC epitaxy. Abstract：
Approximately 1/3 of the global energy consumption is based on electrical power. Improvements in the efficiency of electrical energy transportation, distribution and conversion from the source to the grid and to the final power consumer and device can unfold an enormous energy saving potential.
Over the past decade SiC Schottky diodes were established in applications like switch mode power supplies paving the way for volume SiC production on 150 mm SiC substrates. 900-1700V SiC MOSFETs have been added recently to the product portfolio of various power device manufacturers enabling power conversion applications for solar inverter, UPS, air-conditioning, automotive or traction applications. AIXTRON is supporting these steadily growing industrial activities with their latest generation 8x150 mm G5 Warm-Wall Planetary Reactor® which became a tool of record for IDMs and material manufacturers soon after its introduction. We will report on the latest technology advances and results based on AIXTRON achievements at customers and laboratory, including the high-throughput growth of ultra-thick epitaxy aiming at high-voltage applications.
In particular for consumer electronic applications energy efficiency is gaining a key enabling position in the development of power supply and charging solutions. GaN-on-Si technology combines economy of scale by the use of standard Silicon substrates and the unique properties of a AlGaN based HEMT power switching devices. The requirements for the MOCVD growth technology are multifold: Thick buffer layer which can carry the required high blocking voltages of the device (100-600V) combined with low final wafer warpage and bow and low crystal defectivity are essential for a robust device technology. Full automation of the MOCVD material growth process enables high yield HEMT material processing. Highly competitive cost of ownership is a precondition to successfully continue today’s production ramp of the HEMT industry.
In this respect, AIXTRON has further improved the AIX G5+C Planetary batch system, resolving the common challenges of high-yield, high-quality and high-throughput production of GaN-based materials on large-area silicon wafers through its fully automated cassette-to-cassette loader and a thermally activated chemical reset of the MOCVD growth chamber. Details of the technology and the achieved results are discussed in the second part of the presentation. |
