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Dr. Johannes Schoiswohl Senior Vice President and General Manager GaN Business Line, Infineon Technologies |
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讲师简介 / Speaker Bio Johannes Schoiswohl, Ph.D., Senior Vice President & General Manager at Infineon Technologies Austria AG, since 1st July 2023 Business Line Head of Power & Sensor Systems (PSS) GaN Systems. He started his career as a technology development engineer at Infineon Austria and became director of application and system engineering for the business line DCDC. During this activity he spent several years at Infineon Technologies North America Corporation, San Francisco. Back in Europe he deepened his experience in the fields of Chips & Discretes and Efficient Power Supplies, Isolation & Connectivity. Dr. Schoiswohl holds an Ph.D. in Physics from the Karl Franzens University Graz and a Master of Science in Technical Physics from the University of Technology Graz. 摘要 / Abstract The exponential growth of AI workloads is pushing data center power architectures to their limits, demanding higher efficiency, power density, and scalability. Gallium nitride (GaN) devices provide superior switching speed, reduced conduction losses, and consequently best system performance enabling the leap from traditional kilowatt systems to multi kilowatt and mega-watt racks. In modern AI datacenters, GaN technology is poised to play an increasingly significant role along SiC and Si, helping to enable ultra-compact PSUs and IBC power modules. Advances in GaN technology reduce cooling requirements, help facilitate denser compute racks and GPU-driven AI workloads. As AI continues to scale, GaN's role as a transformative enabler in power conversion ensures datacenters can meet future demands with speed, size, and sustainability at their core. |
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