Tom Thieme graduated from the University of Applied Sciences Berlin (Germany) in process and environmental engineering. Thereafter, 15 years as a professional in the global electronic and semiconductor industry gave him a distinguished experience in semiconductor related product support, marketing and sales.
Initially, as global product manager of TOTAL’s special chemical division, he approached the Asian silicon memory and CMOS semiconductor industry. This gave him a strong technical background on metal deposition processes for silicon and compound semiconductor application and wafer level packaging technologies. Since 2010 Tom is with LayTec and contributed very successfully to LayTec’s extraordinary success in the Greater China’s LED industry. As business development manager he helped our customers take full advantage of LayTec’s in-situ metrology products for compound semiconductor MOVPE processes. Based on his profound understanding of both, compound semiconductor customer needs and technology of integrated metrology he efficiently communicates the requests of our customers in the field back to LayTec’s R&D and application engineering teams. Since 2012 Tom is General Sales Manager of LayTec’s compound semiconductor division and since 2013 director marketing and sales.
Abstract
In-situ metrology is a key enabling technology in today ’s LED production by MOCVD. Especially for Ill-Nitride based opto-electronic devices it is common understanding that in-situ reflectance,
wafer－temperature and wafer-bow measurements are mandatory both for device process development and production yield control. Currently our industry is moving to larger wafer sizes , to more challenging UV emission wavelength and to new, explorative structural designs (e.g. , nanowire LEDs). All this proceeds under the permanent pressure for cost reduction and rising competitiveness. Hence we will discuss the resulting technology challenges for in-situ metrology: How to measure wafer temperature in UV LED epitaxy growth? How to monito「homo-epitaxial GaN film thickness on GaN wafers for advanced laser epitaxy growth? How to interpret the complex in-situ metrology data of 30 growing nano-wire structures? An additional part of this contribution will highlight some recent production line challenges to be tackled by in-situ metrology: How to perform consistent in-situ metrology based statistical process control (SPC) in MOCVD fabs with different generations of epitaxy equipment? We will give an outlook to next generation in-situ monitoring for machine health monitoring and advanced process control (APC). |
