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摘要 / Abstract Increasing demand for high voltage operating devices, particularly the growth in electric vehicles, has led to growing adoption of SiC and GaN based power devices. Despite continued competition from Si based power devices, high efficiency, resistance to harsher environments and fast switching times make SiC MOSFETs an ideal choice for electric traction. We will discuss how physical vapor deposition (PVD) can be used to deposit both thick frontside metal, and thinner multi-layer backside metals deposited after wafer thinning. The presentation will give details of how SPTS Sigma® PVD technology overcomes various challenges which can affect yields in power device manufacturing, including eliminating whiskers during thick metal deposition, avoiding contamination from organics, active-face protection and stress control of backside layers. |
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