Simone Bertolazzi


Simone Bertolazzi, PhD is a Technology & Market analyst at Yole Développement (Yole) working with the Semiconductor & Software division. He is member of the Yole's memory team and he contributes on a day-to-day basis to the analysis of nonvolatile memory technologies, their related materials and fabrication processes.

Previously, Simone carried out experimental research in the field of nanoscience and nanotechnology, focusing on emerging semiconducting materials and their opto-electronic device applications. He (co-) authored more than ten papers in high-impact scientific journals and was awarded the prestigious Marie Curie Intra-European Fellowship.

Simone obtained a PhD in physics in 2015 from École Polytechnique Fédérale de Lausanne (Switzerldand), where he developed novel flash memory cell based on heterostructures of graphene, 2D semiconductors and high-κ dielectrics.


Continuous advancements in semiconductor memory technologies are essential for sustaining the ever-growing bit demand from modern data-centric societies. In the last two years, DRAM and NAND markets hit record-high revenues, registering an impressive 32% CAGR between 2016 and 2018, driven by datacenter and mobile applications. At the same time, emerging non-volatile memory (NVM) made inroads into the storage-class memory (SCM) market through to the introduction of 3DXPoint-based products, whose sales are expected to grow rapidly in the coming years thanks to Intel’s leading position in the server processor business. This talk will provide an overview of the semiconductor memory market, with special focus on the players’ dynamics and strategies in the emerging NVM business.