(** to designate keynote talk, * to designate invite talk)
Sunday, March 12, 2017 Shanghai International Convention Center
Meeting Room: 3B
Session I: Memory Technology - I
Session Chair: Min-Hwa Chi
| **13:30-14:00 | STT-MRAM and its Application for Nonvolatile Brain-Inspired VLSIs |
| Tetsuo Endoh, Tohoku University | |
| **14:00-14:30 | Perpendicular STT-MRAM Macro Embedded into 40nm CMOS Logic Platform |
| Yu Lu, Hikstor Technology Ltd. | |
| **14:30-15:00 | Diffusive Memristors for Future Computing |
| Jianhua Yang, University of Massachusetts | |
| *15:00-15:25 | Ultrathin Bilayer Nonlinear RRAM based on Non-filamentary Switching Mechanism |
| Tuo-Hung Hou, National Chiao Tung University | |
| 15:25-15:40 | Coffee Break |
Session II: Novel Solid State Devices
Session Chair: Cor Claeys
| **15:40-16:10 | III-N Heterostructure Devices for Low-Power Logic |
| Patrick Fay, the University of Notre Dame | |
| *16:10-16:35 | Steep Slope Transistors with tunnel FETs for Low Power Electronics |
| Qingtai Zhao, Forschungszentrum Julich | |
| *16:35-17:00 | Monolithic 3D (M3D) Reconfigurable Logic Applications Using Extremely-Low-Power Electron Devices |
| Woo Young Choi, Sogang University | |
| Poster Session: | Location: Foyer of Yangtze River Hall |
| Coffee Break | A Method to Solve Reverse Tunneling Disturb Issue for Split-Gate Super Flash Memory |
| Tao Xu, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
| The Design and Implementation of A Reconfigurable Convolution Operator based on APU | |
| YuQian Huang, Peking University | |
| Compact Electrodynamics MEMS-Speaker | |
| Burhanuddin Yeop Majlis, Universiti Kebangsaan Malaysia | |
| IDENTIFICATION AND SOLUTIONS FOR A NOVEL PARTICULATE POLLUTION MATTER IN WAFER SURFACE CAUSED BY CONCENTRATED SULFURIC ACID | |
| LU SUN, SMIC | |
| Optimal Experiment Design in Poly Etch Process for Performance Improvement on Different Type Tool | |
| Ying Emily Lu, Semiconductor Manufacturing International Corporation | |
| Development of damage free megasonic cleaning device | |
| Yu Teng, Beijing NAURA Microelectronics Equipment Co., Ltd. | |
| A Reliability Study of A New Embedded Flash to Reduce Charge-Loss Issue | |
| Lingling Shao, SMIC | |
| IDLE RECIPE AUTOMATIC CONTROL | |
| Wei Wei Yan, Semiconductor Manufacturing International Corporation | |
| Investigation of CMOS Image Sensor Dark Current Reduction by Optimizing Interface defect | |
| Wu Zhi Zhang, Shanghai Huali Microeletronics Corporation | |
| A Novel 25V DDD NMOS Design in 500-700V Ultra High Voltage BCD Process | |
| Donghua Liu, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
| Metal-electrode-dependent negative photoconductance response of the nanoscale conducting filament in the SiO2-metal stack | |
| Tomohito Kawashima, Toshiba | |
| A Novel 25V PLDMOS Design in 700V BCD Process | |
| Wenting Duan, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
| The Vt Variation Improvement by SuperScan II in PMOS Device | |
| Xiaoqi Li, Applied Materials China | |
| Application of resist profile model and resist-etch model in solving 28nm Metal resist toploss | |
| Tan Yiqun, Shanghai Huali Microelectronics Corporation | |
| Depletion-Mode MOS Capacitor Modeling Investigation | |
| Chien-Lung Tseng, SMIC | |
| Simulation on the Performance Comparison for Nanoscale SOI and Bulk Junctionless FinFETs | |
| Cheng-Kuei Lee, Tsinghua University | |
| Analysis and Modeling of Self-Heating Effects in Bulk FinFETs | |
| Xi Lin,SMIC ATD |
Monday, March 13, 2017 Shanghai International Convention Center
Meeting Room:Meeting Room: 3B
Session III: Device Reliability and Noise Characteristics
Session Chair: Huaqiang Wu
| 8:30-8:45 | A Study of HCI Improvement by 28nm LDMOS Structure Optimization |
| Ruoyuan Li, SMIC | |
| 8:45-9:00 | Reliability Investigations on The Programming Currents of 28nm Metal E-Fuse |
| Guangyan Zhao, SMIC | |
| 9:00-9:15 | Physics-Based Analytical Modeling for Electromigration Reliability in Multi-Branch Interconnect Trees Considering Time-Varying Temperature |
| Jiangtao Peng, Shanghai Jiao Tong University | |
| **9:15-9:45 | Reliability Enhancement of Phase Change Memory Using Metal Nitride Liner |
| SangBum Kim, IBM | |
| *9:45-10:10 | Defects and Lifetime Prediction for Ge pMOSFETs under AC NBTI Stresses |
| J.F.Zhang, Liverpool John Moores University | |
| 10:10-10:25 | Coffee Break |
Session IV: Memory Technology - II
Session Chair: Chung Lam
| **10:25-10:55 | Challenges and Opportunities for RRAM: From Technology to Applications |
| Zhiqiang Wei, Panasonic | |
| *10:55-11:20 | Investigation of Trap Profile in Nitride Charge Trap Layer in 3-D NAND Flash Memory Cells |
| Jong-Ho Lee, Seoul National University | |
| 11:20-11:35 | Spike Timing Dependent Plasticity of Flexible and Fully Transparent Memristors for Electronic Synapse Applications |
| Chenghao Liao, Fuzhou University | |
| 11:35-13:05 | Lunch Break |
Session V: 1D and 2D Material
Session Chair: Jong-Ho Lee
| *13:05-13:30 | Nanoscale Thermocapillarity Enabled Purification For Horizontally Aligned Arrays of Single Walled Carbon Nanotubes |
| Sung Hun Jin, Incheon National University | |
| *13:30-13:55 | High Performance Two Dimensional Electronic Devices |
| Yanqing Wu, Huazhong University of Science and Technology | |
| *13:55-14:20 | Analyzing the carrier mobility in two-dimensional MoS2 transistors |
| Xinran Wang, Nanjing University | |
| 14:20-14:35 | Coffee Break |
Session VI: Advanced Device and Process Technology
Session chair: Hong Wu
| *14:35-15:00 | Advanced Logic and Specialty Technologies for VLSI Manufacturing in fast expansion at China |
| Min-hwa Chi, SMIC | |
| *15:00-15:25 | Comparative Experimental Study of the Improved MOSFET Matching by Using the Hexagonal Layout Style |
| Salvador Pinillos Gimenez, Centro Universitario da FEI | |
| 15:25-15:40 | Analytical Modeling for Substrate Effect of Lateral Power Devices |
| Yufeng Guo, Nanjing University of Posts and Telecommunications | |
| 15:40-15:55 | MOSFET RF Performance Improvement through Spacer Profile Optimization for 28nm Poly/SiON SOC Technology |
| Hai Liu, SMIC | |
| 15:55-16:10 | Highly Precise Control of Poly Gate etching by Interferometry Endpoint Prediction (IEP) |
| Jie Zhang, AMEC | |
| 16:10-16:25 | Analysis of Temperature Effects for 14nm FinFET Technology |
| Xiaolei Yang, SMIC |