| Date: | 08:45-10:15 on March 24, 2026 | ||
| Venue: | 3F, Kerry Hotel Pudong, Shanghai | ||
| Meeting Room: | Pudong Ballroom 5 | ||
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Speaker 1: Dr. Cheng Qi, Technical Expert, Shanghai Huali Microelectronics, China Biography: Dr. Cheng, Qi received the Ph.D degree from University of Missouri, Columbia, U.S.A. in electrical and computer engineering. He holds several patents and has published more than 10 international journal or conference papers.He is currently a technical expert in Shanghai Huali Microelectronics. He served as many critical roles of process R&D in semiconductor industry. His expertise includes process and equipment co-optimization of ICP, CCP and special etch, advanced patterning and advanced process integration. He also has strong experience of strategic planning and technical roadmap design for top wafer fabrication equipment (WFE) company to drive revenue growth and increase market share in new domain. |
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Speaker 2: Mr. Zheng Tao, Vice President of etching product center, Leuven Instruments, China Biography: Mr. Zheng Tao serves as the vice president of etching product center at Leuven Instruments. He leads the research projects for the development of Chimera 300mm ICP etch systems for advanced node of logic and memory devices. His research focus is on process technology and integration, advanced patterning, ion beam etch technology and plasma physics. Prior to joining Leuven Instruments, he was PMTS in advanced patterning department of imec for over 10 years. Prior to that, he worked for AMEC, Sony, UMCi, Lam research in the field of plasma etch and process development since year 2000. Mr. Zheng Tao received his bachelor degree in Chemistry from Fudan University, China. He holds more than 30 patents and has published ~10 academic papers in international journals and conferences. |
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| Abstract: | ||
| Part I: Plasma Dry Etch 等离子体干法刻蚀 | ||
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Plasma dry etch 等离子体干法刻蚀 | |
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Basic knowledge 基础知识 | |
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Anisotropic vs Isotropic 各向异性，各向同性 | |
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Etch selectivity 选择比 | |
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PR strip 去胶工艺 | |
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Plasma etch tool introduction 刻蚀机简介 | |
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Plasma etch deep dive 等离子体刻蚀进阶 | |
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Key specs and etch parameters 刻蚀的关键spec与参数 | |
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Dry etch process control 刻蚀工艺控制的方法 | |
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Etch profile tuning aspects; Profile相关: Micro-trench/Notching, striation, RIE LAG | |
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Production aspects 大量产相关 | |
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| Part II: Advanced Patterning 先进图案 | ||
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Advanced process road map (Logic & Memory)先进工艺路线图(逻辑与存储器件) | |
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Conventional patterning scheme： LE/SL 传统的图案化方法 | |
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Advanced patterning scheme I: LELE 先进图案化1 | |
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Advanced patterning scheme II: SL-LE 先进图案化2 | |
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Advanced patterning scheme III: SADP/SARP/SAQP/X-SADP 先进图案化3 | |
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Advanced patterning scheme IV: Special patterning process 特殊图案化工艺 先进图案化4 | |