Jon Cheek

Senior Director, Process Technology Development

NXP Semiconductors


Silicon on Insulator technology is a very diverse and multi-faceted enabler of semiconductor products. In certain areas if offers performance advantages across a wide dynamic range of leakage and in other areas it enables the use of high voltages in multi-domain designs. Add to this the inherent low capacitance which makes it great for ultra-fast switching in RF designs and significantly improved radiation robustness compared to bulk CMOS; it’s easy to see why SOI technology continues to expand in use through-out the industry.
The use of Fully-Depleted SOI, FD-SOI, combined with an ultrathin buried oxide create a technology ideally suited for the Internet of Things revolution. FDSOI enables the dynamic modulation of the threshold voltage during operation, not just during the design phase, to open a whole new world of creative product opportunities.  One such example is the creation of ultralow leakage embedded SRAM memories which consume so little power that some  resulting IoT products can last years on a single household battery.
Other versions of SOI Technology with thick buried oxide enable use of 50V to 70V domains on a chip without need of complex isolation schemes.  This ability to provide high voltage support along with digital processing is yet another reason SOI is adopted to provided differentiation in product offerings.