** to designate keynote talk Sponsored by:
* to designate invite talk
  to designate regular talk

Session I: CMP
Session Chair: Xinping Qu


Opening Remarks
Xinping Qu
*Closing the Loop: CMP Process Control Methodology and Implementation
Brian Brown, Applied Materials
*What CMP can do for Waferbonding?
Knut Gottfried, Fraunhofer-Institute for Elektronic Nanosystems ENAS
 

Session II: Post CMP cleaning
Session Chair: Yuchun Wang


*Characterization of Ceria and Silica Particle Loading on Post CMP Cleaning
Jin-Goo Park, Hanyang University
*Development of Post CMP Cleaning Chemistry
Cass Shang, GrandiT Co. Ltd.
*Challenges and Solutions for Post-CMP Cleaning at Device and Interconnect Levels
Jihoon Seo, Clarkson University
Nano-ceria particles cleaning by HNO3-H2O2-DIW solution at room temperature
Yingjie Wang, Fudan University
 

Session III: FRONT END CMP
Session Chair: Shoutian Li


*Development of CMP Head-to-Head Compensation Function for Gate Height Uniformity Control
Yurong Que, Shanghai Huali Integrated Circuit Corporation
Several Strategies for Al Metal Gate Chemical Mechanical Planarization Scratch Reduction
Qingxuan Hong, Shanghai Huali Integrated Circuit Corporation
Mark Damage Phenomenon Caused by Superimposed CMP Dishing on Large-Area STI Regions
WenSheng Xu, Shanghai Huali Microelectronics Corporation
 

Session IV: DIELECTIC and COMPOUND CMP
Session Chair: Baoguo Zhang


*Chemical Mechanical Planarization of Silicon Dioxide Film in Colloidal Silica based Alkaline Slurry
Chenwei Wang, Hebei University of Technology
Component Optimization of Sapphire Slurry based on Response Surface Methodology for Chemical Mechanical Polishing
Minghui Qu, Hebei University of Technology
 

Session V: METAL CMP
Session Chair: Jingxun Fang


*W CMP slurries
Chun Lu, Merck
*Defect Law of Cu/Co Pattern Wafers After Using A Novel Bulk/Barrier Slurry and Cleaning Solution
Lifei Zhang, Tsinghua University
IMPROVEMENT OF CU-CMP ENDPOINT CURVES FOR DIFFERENT PATTERN DENSITY
Yi Xian, Shanghai Huali Integrated Circuit Corporation
Effect of TAZ as inhibitor on CMP process of molybdenum
Pengfei Wu, Hebei University of Technology
Effect of OA and JFCE as Surfactants on the Stability of Copper Interconnection CMP Slurry
Yan Han, Hebei University of Technology
Effect of different complexing agents on chemical mechanical polishing of copper film
Fu Luo, Hebei University of Technology
Improvement of sensitivity of eddy current thickness sensors with ferrite core for CMP process
Chengxin Wang, Tsinghua University

Poster Session:

Dishing improve in Advanced Technology Nodes
Yu Yang, Shanghai Huali Integrated Circuit Corporation
An optimized method for Cu CMP dishing improvement
Lei Zhang, Shanghai Huali Integrated Circuit Corporation
Study on the correlation between CMP Cu Loading and Edp curve
Yuanyuan Meng, Shanghai Huali Integrated Circuit Corporation
Tungsten CMP Consumable Localization study at 28nm Technology Node
Shaojia Zhu, Shanghai Huali Integrated Circuit Corporation
An optimized monitoring method for 28HK ILDCMP
Jingjing Li, Shanghai Huali Integrated Circuit Corporation
SIN Residue Improvement of ILD0CMP at 28nm Technology Node
Yurong Que, Shanghai Huali Integrated Circuit Corporation
CMP Scratch improve in Advanced Technology Nodes
Weiran Sun, Shanghai Huali Integrated Circuit Corporation
STUDY ON HIGH STRESS SENSITIVITY OF COBALT "BULK CMP"
Yuanshen Cheng, Hebei University of Technology
Dielectric CMP WIW Uniformity Control by FullVision MPC
Ran Yin, Applied Materials
CleanStart Arm in CMP process for CoC reduction
Yifeng Zheng, Applied Materials
WiW iAPC Successful Application in Post CMP Range Control
Kun Zhang, Applied Materials
AMAT PreClean for Ceria CMP Defectivity and Productivity Improvement
Na Xiao, Applied Materials
Twinning phenomenon and analysis of InP crystal growth
Yanlei Shi, 13th Research Institute of CETC
RR Profile Trend Worse Issue Improved Through HPPC Function
Huijun Zhang, Applied Materials China
Study on Preparation and Polishing Performance of Ceria slurry
Ye Wang, Hebei University of Technology
Study on Corrosion of Titanium Nitride Corrosion during Chemical Mechanical Polishing in H2O2 Based Slurry
Feng Guo, Hebei University of Technology
CMP PreClean Module for High Particle Removal efficiency clean
Pingyuan Lu, Applied Materials
Preclean Module for Nano Particle Reduction in Post CMP
Yongbin Wei, Applied Materials
The research on synthesis temperature and solidification ways of InP polycrystal
Lijie Fu, The 13th Research Institute, CETC
The Effect of Pentapotassium Diethylenetriaminepentaacetate on the Removal Rate Selectivity of Cu/Ru/TEOS During CMP
Huiping Ma, Hebei University of Technolog
Tool Uptime Improvement and CoC Reduction by HPPC Function
Shaopeng Zhang, Applied Materials
Effect of Process Conditions on the Dishing and Erosion Correction on Copper Barrier CMP
Xinying Zhang, Hebei University of Technology
Low Pressure Rinse Improve the Defect of Cu Layers
Yunlong Wu, Applied Materials