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Chinese
2020年6月27-29日
上海新国际博览中心

Symposium V: CMP and Post-Polish Cleaning


(** to designate keynote talk, * to designate invite talk)

Sunday, March 15, 2020 Shanghai International Convention Center
Meeting Room:5D+5E

Session I: CMP integration
Session Chair: Xin-Ping Qu
 
**13:30-14:00 Lead the future
  Tsujimura Manabu, Ebara Corp.
*14:00-14:25 Solving CMP challenges for chemically stable materials and 3D shapes
  Hitoshi Morinaga, FUJIMI Incorporated
*14:25-14:50 Why Is The Whole World Getting SiC?
  Rob Rhoades, Revasum
*14:50-15:15 TBD
   
15:15-15:30 Coffee Break
   

Session II: CMP Slurry
Session Chair: YuChun Wang

*15:30-15:55 Stop on nitride slurry development
  Shoutian Li, Anji Microelectronics
*15:55-16:20 Advances in CMP formulation
  Hongjin Zhou, Versum Materials


Monday, March 16, 2020 Shanghai International Convention Center
Meeting Room: 5D+5E

Session III: FEOL CMP
Session Chair: KC Wu, Jing-Xun Fang 
 
*8:30-8:55 Novel Abrasion-free CMP Technology with High Performance Polishing Slurry
  Yuling Liu, Hebei University
*8:55-9:20 Auto stop slurry one platen polishing application for memory devices
  Jinfeng Wang, Cabot Microelectronics Corporation
9:20-9:35 Study of Ceria Settling in CMP Slurry
  Xiaoming Ren, Anji Microelectronics
9:35-9:50 iAPC WiW for Wafer-Edge Profile Control in FEOL CMP
  Yunlong Wu, Applied Materials
9:50-10:05 Coffee Break
   

Session IV: CMP profile
Session Chair: Tae-Gon Kim, A.Chen

*10:05-10:30 in-situ pad topography monitoring and analysis for CMP
  Chao-Chang Chen, National Taiwan University of Science and Technology
*10:30-10:55 In-situ end point detection and dynamic profile tuning (DPT) for CMP process
  Tongqing Wang, Tsinghua University
*10:55-11:20 Sidewall roughness behavior at different process conditions
  Tae-Gon Kim, Hanyang University
*11:20-11:45 Pattern loading effect optimization of BEOL Cu CMP in 14nm technology node
  Zhang Lei, Huali
11:45-12:00 FullVision XE for Profile Control in Advanced Applications
  Ying Xu, Applied Materials
12:00-12:15 Real Time Process Monitoring in CMP, Post CMP Blending and Distribution Applications
  Karl Urquhart, Diversified Fluid Solutions
11:15-12:30 Improvement Illustrations for Cu CMP defects Reduction
  Ji-Ming Jiang, Suzhou IV Technology
12:30-13:30 Lunch Break
   

Session V: metal CMP(I)
Session Chair: Xinchun Lu

*13:30-13:55 The adsorption and removal of corrosion inhibitors during metal CMP
  Jin-Goo Park, Hanyang University
*13:55-14:20 Determining Instantaneous Removal Rates in Metal CMP
  Ara Philipossian, Araca Inc
14:20-14:35 Correlating Coefficirnt of Friction and Shear Force to Plate Motor Current in Tungsten and Interlayer Dielctric CMP at Steady-State Confitions
  Ara Philipossian, Araca Inc
   

Session VI: Post cleaning
Session Chair: J.G. Park

*14:35-15:00 Nano Particle Removal Using Advanced Filtration for Post CMP Clean
  David Huang, PALL
15:00-15:25 Optimization of Water Polishing to improve abrasive removal after CMP
  Taesung Kim, Sungkyunkwan University
15:25-15:40 Effects of different inhibitors on Cu-Co galvanic corrosion in post CMP cleaning
  Xiaoqin Sun, Hebei University of Technology
15:40-15:55 Coffee Break
 
   

Session VII: modeling
Session Chair: David Huang

*15:55-16:20 Modeling of chemical mechanical polishing incorporating the effect of micro contact of polishing pad
  Ping Zhou, Dalian University of Technology
16:20-16:35 Molecular dynamics study on sub-nanoscale removal mechanism of 3C-SiC in a fixed abrasive polishing
  Piao Zhou, Nanjing University of Aeronautics and Astronautics
 
   

Session VIII: metal CMP II
Session Chair: Ping Zhou

16:35-16:50 Role of Slurry Chemistry for Defects Reduction during Barrier CMP
  Chenwei Wang, Hebei University of Technology
16:50-17:05 Role of slurry Additions on Chemical Mechanical Polishing of Cu/Ru/TEOS in H2O2-based Slurry
  Chao Wang, Hebei University of Technology
17:05-17:20 Effect of various Surfactants on surface Roughness Reduction during Cobalt "Buff step" CMP
  Yuanshen Chen, Hebei University of Technology
 
   

Session IX: compound CMP
Session Chair: Xin-Ping Qu

17:20-17:35 Mechanism Analysis of Silicon Surface and Carbon Surface CMP of 4H-SiC Wafer
  Gaoyang Zhao, Shanghai Institute of Microsystem and Information Technology
17:35-17:50 Investigation on the gallium nitride polishing process under hybrid-field effects
  Liwei Ou, Dalian University of Technology
17:35-17:50 Effect of potassium salts on the Chemical Mechanical Polishing Efficiency of Sapphire Substrate
  Lu Yanan, Hebei University of Technology
   
Poster Session: Location: 5th Floor
Coffee Break Study on Cleaning Process of Large Size Sapphire Substrate after CMP
  Zhen Liang, Hebei University of Technology
  A Study of Causes and Improving Methods of Chipping in BSI Process
  YurongCao, HLMC
  Study on the Properties of Silica Colloid Prepared by Different Processes in Silicon Wafer CMP
  Li Weiwei, Hebei University of Technology
  Metal Clear Sensor- A Residual Free Solution for Al CMP in 28HKMG Technology
  Yunhong Hou, Applied Materials China
  Far-Edge “Check Mark” Profile Control for CMP
  Youlai Xiang, Applied Materials China
  AMAT High Performance Pad Condition(HPPC) --- A Novel Process Control System
  Qiaofeng Zhang, Applied Materials China
  Creating a Cu CMP ISRM Segment to Prevent Cu Residue Defect in 28nm Logic Technology
  Wang Lin, Applied Materials China
  TiN CMP Endpoint Development for 45nm PCRAM
  Wang Lin, Applied Materials China
  FullVision™ XE with MPC In-Situ Profile Control for Oxide CMP
  Changxing Tan, Applied Materials
  Impact of bevel condition on STI CMP scratch
  Meng yuanyuan, HLMC
  Material removal mechanism of copper during the chemical mechanical polishing process under pad-asperity scale
  Lin Wang, Dalian University of Technology
  Effects of Heat Treatment in Air Environment on the Dispersivity of Nanodiamond
  Xiaoguang Guo, Dalian University of Technology
  Effect of Complexing agent in Slurry on CMP property for Barrier Material Cobalt
  Jinsong Zuo, Tianjin University of Technology
  Investigation on Alkaline Based Fumed Silica Slurry pH Effect on Oxide CMP Micro Scratch and Improvement method
  Xueliang Li, Cabot Microelectronics Corporation
  Recycling Slurry by Bleed and Feed Method for Chemical Mechanical Planarization of Mono Silicon Wafer
  Wei-Chin Pu, Chao-Chang Chen, National Taiwan University of Science and Technology
  Role of Diethylenetriamine Pentaacetate Pentapotassium in Barrier Slurry for Copper Barrier Chemical Mechanical Planarization
  Huo Zhaoqing, Hebei University of Technology
  Effect of Potassium Oleate as the Inhibitor on Copper CMP
  Yang Chenghui, Hebei University of Technology
  Effect of chelators on the removal of BTA in post-CMP cleaning
  Liu Mengrui, Hebei University of Technology