Symposium Chair: Prof. Xinping Qu, Fudan University, China
| ** | to designate keynote talk - 30 min | |||
| * | to designate invite talk - 25 min | |||
| to designate regular talk - 15 min |
Sunday, March 22, 2026, Kerry Hotel Pudong, Shanghai
Meeting Room: Tower Room 8
Session I: CMP and Advanced Packaging
Session Chair: Xinchun Lu
| **13:30-14:00 | CMP as an Enabling Technology: Opportunities and Challenges |
| Jingoo Park, Hanyang University | |
| **14:00-14:30 | CMP in Hybrid Bonding and Advanced Packaging - Challenges and Strategies |
| Knut Gottfried, ErzM-Technologies | |
| *14:30-14:55 | Emerging CMP Solutions for Advanced Packaging |
| Jae-Dong Lee, KC Tech | |
Session II: AI Driven CMP and Cleaning
Session Chair: Yuchun Wang
| *14:55-15:20 | Machine Learning in Chemical Mechanical Polishing: Marriage of Convenience or True Love Story? |
| Jiakai Zhou, Hebei University of Technology | |
| *15:20-15:45 | Data Guided Corrosion Control Strategies for Advanced CMP Processes |
| Jihoon Seo, Hanyang University | |
| *15:45-16:10 | Nanobubbles: a Sustainable Technology in Semiconductor Cleaning |
| Lijuan Zhang, Shanghai Advanced Research Institute, Chinese Academy of Sciences | |
| 16:10-16:30 | Coffee Break |
| 16:30-18:00 | Panel Discussion(Meeting Room: Pudong Ballroom 1) |
Monday, March 23, 2026, Kerry Hotel Pudong, Shanghai
Meeting Room: Tower Room 8
Session III: Si and SiO2 Polishing
Session Chair: Weili Liu
| *08:35-09:00 | Abrasive Challenges and Transformations in CMP Slurry |
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Jiani Chu, Qnity Electronics, Inc. |
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| *09:00-09:25 | Understand Prestonian Behavior in CMP |
| Shoutian Li, Anji Microelectronics | |
| *09:25-09:50 | The Manufacture of Ultra-Clean and Ultra-Flat Silicon Wafers |
| Hui Wang, Zhonghuan Advanced Semiconductor Material Co., Ltd | |
| *09:50-10:15 | Integrated Strategy for High Efficiency and Low Defect Wafer Planarization Processes |
| Lifei Zhang, Tsinghua University | |
| 10:15-10:30 | Improving Defect Performance in Silicon Buffing Chemical Mechanical Polishing (CMP) through Process integration and Parameters Optimization |
| Huaifang Li, Fujian Jinhua Integrated Circuit Co., Ltd | |
| 10:30-10:50 | Coffee Break |
Session IV: Metal Polishing
Session Chair: Yonggen He
| *10:50-11:15 | Atomic-Level Material Removal Mechanism of Copper in Chemical Mechanical Polishing |
| Liang Jiang, Southwest Jiaotong University | |
| 11:15-11:30 | The Effect of Amino Acids Corrosion Inhibitor on Chemical Mechanical Polishing of Molybdenum |
| Qiancheng Sun, Fudan University | |
| 11:30-11:45 | The Effect of Phosphate-Functionalized Anionic Surfactants on the CMP Performance of Ruthenium-Based Copper Interconnect Films |
| Shaobo Song, Hebei University of Technology | |
| 11:45-12:00 | Effects of Oxidants and Complexing Agents on Enhancing the Removal Rate of Ti Barrier Layers during Chemical Mechanical Polishing Process |
| Qinhua Miao, China University of Mining & Technology-Beijing | |
| 12:00-13:30 | Lunch Break |
Session V: Dielectrics CMP
Session Chair: Shoutian Li
| *13:30-13:55 | Development of a Chemical-Mechanical Action-based Predictive Framework for CMP MRR and Micro-topography | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Ping Zhou, Dalian University of Technology | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| *13:55-14:20 | Regulation Strategies of Novel Mesoporous Ceria Abrasives for Advanced CMP | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Wei Yuan, Fudan University | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 14:20-14:35 | Investigation of Inhibitor Effects in STI CMP Slurries Based on Mesoporous Ceria | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Linyi Shen, Fudan University | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Session VI: CMP of Compound Semiconductor Session Chair: Baoguo Zhang
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