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  1. Christian Schmid

    ...minescence in GaN. J. Lumin. 4, 63 [2]   Amano H, Kit...

    Basic page - 2017-01-11 11:26:03.0

  2. Charles LI

    ...verflow: hidden; border-radius: 65px; border:0px solid #cccccc; } Ch...

    Basic page - 2018-12-27 17:09:43.0

  3. Liang WU

    ... Due to its ultra-wide bandgap (6.2eV), similar thermal expansion co...

    Basic page - 2017-01-11 11:30:59.0

  4. Markus Behet

    ...verflow: hidden; border-radius: 65px; border:0px solid #cccccc; } Ma...

    Basic page - 2019-12-19 14:08:54.0

  5. Masakatsu Hoshi

    ...r Polytechnic Institute from 1996 to 1997 to research SiC devices. N...

    Basic page - 2017-01-11 11:37:32.0

  6. Yi Pei

    ...verflow: hidden; border-radius: 65px; border:0px solid #cccccc; } Yi...

    Basic page - 2017-12-26 16:42:23.0

  7. C.K. Lin

    ...development team totally up to 26 people and Customer engineer team ...

    Basic page - 2024-12-04 14:04:31.0

  8. Durga Chaturvedula

    ...r Electronics Industry, June 2016). Power Devices resides in the ‘Mo...

    Basic page - 2017-02-15 17:33:59.0

  9. Yufeng Qiu

    ...several researches of National 863 Project and National 973 Project,...

    Basic page - 2017-03-07 13:54:24.0

  10. Symposium X: Si Materials and Photovoltaic Technology

    ...sp;   Monday, March 14, 2016  Shanghai International Conve...

    Basic page - 2016-12-16 14:01:04.0