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March 20-22, 2019
Shanghai New International Expo Centre

Power & Compound Semiconductor International Forum 2019

Power & Compound Semiconductor International Forum 2019
Date: March 21-22, 2019
Venue: Pudong Ballroom 4, Shanghai Pudong Kerry Hotel
Chinese and English Simultaneous Interpretation will be provided

Attendee Registration   Previous Review

The "Power & Compound Semiconductor International Forum 2019", which is one of the largest professional event about power and compound semiconductor industry in Asia, will be organized in conjunction with SEMICON China 2019 on Mar.21-22, 2019 in Kerry Hotel at Shanghai.
The Forum is a two-day program and focuses on topics including: Wide Band Gap Power Electronics, Optoelectronics, Compound Semiconductor in Communications, and Emerging Power Device Technology.

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Day1-Mar.21st, 2019
   
08:30-09:15 Registration / 注册
   
09:20-09:30
Welcome Remark / 欢迎致辞
Lung Chu 居龙
President, SEMI China
SEMI中国,总裁
   
Opening Keynote Speech / 开幕主旨演讲
   
  Moderator/主持人:
   
09:30-10:00
Keynote Speech / 主旨演讲
Andy Chuang 庄渊棋
CEO of Episil
汉磊科技,总经理
   
10:00-10:30
Keynote Speech: Silicon Carbide Materials and Devices for Power Switching Applications
用于功率开关应用的碳化硅材料及器件

John Palmour
CTO, Wolfspeed
Wolfspeed, 首席技术官
   
10:30-11:00
Keynote Speech: Using VCSELs in 3D Sensing Applications
用于3D检测的VCSELs技术

Craig Thompson
Vice President, New Markets, Finisar Corporation
Finisar Corporation, 副总裁
   
11:00-11:30
Transforming The Automotive World with Smaller, Lower Cost, More Efficient Power Electronics
Stephen Coates
VP Global Operations, GaN Systems
   
11:30-13:30 Break / 休息
   
*Session: Compound Semiconductor in Optoelectronics, Communications 化合物半导体与光电及5G通讯
   
  Moderator/主持人:
   
13:30-14:00
Keynote Speech: Micro LED: Real Revolution for Display Industry
Micro LED: 终极显示技术

Charles Li 李允立
CEO, Playnitride
錼创科技,首席执行官
   
14:00-14:25
An EPI AOI System Based on Deep Learning Algorithm for GaN and GaAs
一种基于深度学习算法用于氮化镓及砷化镓外延片检测的AOI检测系统

Aris Ma 马铁中
CEO, AK Optics Technology Co. Ltd
昂坤视觉(北京)科技有限公司,首席执行官
   
14:25-14:50
From Si to Compound Semiconductor--EPI Technology and Application in Power Electronic Devices
Jun Wu 吴军
Vice President, Naura Technology Group Co., Ltd
北方华创,副总裁
   
14:50-15:15 Compound Semiconductor Power Electronic Devices Manufacturing in Sanan-IC
化合物半导体功率器件制造-三安集成电路

Nien-Tze Yeh 叶念慈
Director of Technology Development, Xiamen Sanan Integrated Circuit Co., Ltd.
厦门三安集成电路有限公司,总监
   
15:15-15:30 Break / 休息
   
15:30-15:55
Compound Semiconductor in Wireless Communication: Opportunities & Challenges
化合物半導體於無線通訊之展望與挑戰

Chuck Huang 黃智文
Associate Vice President, Win Semiconductors Corp.
穩懋半導體,協理
   
15:55-16:20
GaN on Si – A Key Enabling Technology for 5G
Markus Behet
CMO, EpiGaN
比利时 EpiGaN公司,首席市场官
   
16:20-16:45
VCSEL Technology and Applications
VCSEL 技术及应用

James Liu
CEO, Ningbo RaySea Technology Inc, Ltd
宁波睿熙科技有限公司,首席执行官
   
16:45-17:10 GaN-A Critical Technology for 5G
氮化镓 – 实现5G的关键技术

James Huang 黄靖
Sr. Manager, Qorvo
Qorvo, 高级销售经理
   
Day2-Mar.22nd, 2019
   
*Session: Wide Band Gap Semiconductors & Emerging Power Devices 宽禁带半导体及新型功率器件
   
  Moderator/主持人:
   
09:30-10:00
Keynote Speech: Compound Semiconductors for Connectivity, Sensing, and Energy
Wayne Johnson
Vice President, IQE
IQE, 副总裁
   
10:00-10:25
From Market Push to Pull – SiC Transistors Are Leaving The Niche
正在走向更广阔市场的碳化硅晶体管

Peter Friedrichs
Senior Director SiC, Infineon Technologies AG
英飞凌科技,高级总监
   
10:25-10:50 Speech Reserved for a SiC Material Maker
   
10:50-11:15 Advances in Plasma Processing for WBG Power Electronics
Robert Gunn
Strategic Marketing Manager, Oxford Instruments Plasma Technology
英国牛津仪器,战略营销经理
   
11:15-11:40
Solutions for Wide Bandgap Power & RF Applications
Vincent MERIC
Senior Product Manager, AIXTRON SE
德国爱思强股份有限公司,高级产品经理
   
11:40-13:00 Break / 休息
   
13:00-13:30
New Generation High Power Semiconductor Device Introduction
新世代高功率半導體器件介紹

Henry Yeh 葉時豪
General Manager, Bruckewell Technology Corp., Ltd.
Bruckewell Technology Corp., Ltd, 總經理
   
13:30-14:00
Development of Gallium Oxide Power Devices
氧化镓功率器件的进展

Kohei Sasaki
Senior Manager, Novel Crystal Technology, Inc.
   
14:00-14:25 Presentation by ROHM
Speaker TBD
   
14:25-14:50 SiC Materials Manufacturing Technology ( Speech Reveserd )
Speaker TBD
   
14:50-15:15
Advanced 65nm BCD Offering – Advantages And new Opportunities for Power Management Ics
David Mistele
Section Head of Power Management R&D, Towerjazz
   
15:15-15:30 Break / 休息
   
15:30-16:00
SiC Power Device Technology and Application in Electrified Railway
SiC 功率器件技术及其在电气化轨道交通中的应用

Guoyou Liu 刘国友
Vice Chief Engineer, CRRC Zhuzhou Semiconductor
株洲中车时代电气股份有限公司,副总工程师
   
16:00-16:30 TBD
   
16:30-16:50 Lucky Draw 幸运抽奖
   
   
Two-day registration fee:
Type Before Feb.20 with Advanced Payment(Early Bird) After Feb.20 and On-site
Attendees RMB 1,000 per person RMB 1,500 per person
Speakers Free Free
* Lunch is not included
* Agenda is subject to change


For more information and market promotion opportunities 关于论坛更多信息及市场宣传机会

Daniel QI 戚发鑫
Chief Analyst | Industry Research and Consulting (首席分析师 | 产业研究与咨询部)
Director | Power and Compound Semiconductor Industry; Industry Standards(项目总监 | 功率及化合物半导体产业;产业标准发展)
Tel: 86-21-60278576 ; Email: fqi@semi.org