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Dr. Xiabing Lou is an expert in ALD technology. He earned his Ph.D. in Chemistry from Harvard University under the guidance of Prof. Roy Gordon, where his research focused on developing a series of atomic layer deposition (ALD) epitaxial high-k dielectric materials and their applications in semiconductor devices.
Dr. Lou also development of dielectric processes for Gallium Nitride (GaN) devices and led the tape-out of the world's first 8-inch enhancement-mode GaN-on-Si platform.
Currently Dr. Lou is serving as the VP of Suzhou Origin Materials Technology Co., Ltd., Dr. Lou's research interests span the development of novel ALD precursors and innovative processes across diverse fields including semiconductors, displays, solar energy, and optical technologies.
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