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Huihui Li holds a PhD degree in materials science and engineering from the National University of Singapore. He has been working in the semiconductor memory industry for more than 13 years, with his R&D scope covering MRAM, FeRAM, and DRAM, etc. He has published more than 40 journal papers and obtained over 50 granted patents. He is currently with Changxin Memory Technologies, working on the advanced DRAM materials and devices.
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