David Haynes
Vice President of Specialty Technologies and Strategic Marketing, Lam Research Corporation
特色工艺及战略营销副总裁，泛林集团

讲师简介 / Speaker Bio

David gained a BEng and PhD in Materials Engineering from Swansea University.
In his professional career, David has accrued more than 25 years of experience in the Semiconductor Capital Equipment and research instrumentation sectors. Focused on new technology development, he has a strong process background in plasma etch and deposition for optoelectronics, photonics, MEMS, Power and RF Electronics, as well as advanced chip packaging technologies.
Building on this technical knowledge, David has a proven track record in developing strategic business partnerships, specializing in new technology developments and introduction of enabling process capabilities to leading semiconductor fabs worldwide.
David joined Lam Research in June 2016. He is currently Vice President of Specialty Technologies and Strategic Marketing in Lam’s Customer Support Business Group and is responsible for Lam’s strategy in Specialty Technologies.

摘要 / Abstract

GaN is one of the most important third generation semiconductor materials. Its wide bandgap makes it an excellent candidate for high power electronics - GaN high electron mobility transistors (HEMTs) have already become well established in Specialty Technology applications such as consumer fast charging and are gaining traction in automotive.

Today, the most advanced GaN device manufacturing is performed on 200mm wafers. But the recent advances in 300mm GaN on Silicon MOCVD is ushering the next phase of GaN adoption at the larger wafer size. Of increasing interest, is the fabrication of low voltage GaN power electronics targeted at data center power management applications, as the rapidly emerging world of generative AI accelerates datacenter investment.

Lam has been a leader in Specialty Technologies, in the development of enabling process capabilities for 200mm GaN on Si fabrication, for almost a decade. In this paper, we will review the current status of these capabilities and discuss the challenges and opportunities for transitioning GaN from 200mm to 300mm production.