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Dr. Guchang Han
Principal Technologist |
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Dr. Han received Ph.D. at Institute of Plasma Physics, Chinese Academy of Science in 1990. He then joined Deutsches Elektronen-Synchrotron (DESY) as a visiting scholar and the Forschungszentrum Karlsruhe as a postdoctoral fellow. He worked as an assistant professor subsequently in Tohoku University and Kyushu University (Japan) before moving to Singapore in 1996. Since then, he has been working on magnetic read head/sensor and MRAM technology. As a Senior Scientist and Assistant Manager of Nonvolatile Memory Division at Data Storage Institute (DSI), he led MRAM team to develop both STT-MRAM and VC-MRAM technology, and took care of technical development of JDP MRAM project with industry partner. At the mean time, he also served as an adjunct associate professor at both National University of Singapore and Nanyang Technology University. As a Principal Technologist at Zhejiang Hikstor Technology Co., Ltd, Dr. Han is currently engaged in the research and development of MRAM technology, focusing on process development and device performance improvement for new products. Dr. Han has published more than 200 SCI papers, 1 chapter of book, and presented 15 invited talk in the international magnetic conferences (such as Intermag, TMRC, etc.). He has filed more than 50 patents so far. |
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