Date: 08:45-10:15 on March 24, 2026
Venue: 3F, Kerry Hotel Pudong, Shanghai
   

Speaker 1: Dr. Cheng Qi, Technical Expert, Shanghai Huali Microelectronics, China

Biography:

Dr. Cheng, Qi received the Ph.D degree from University of Missouri, Columbia, U.S.A. in electrical and computer engineering. He holds several patents and has published more than 10 international journal or conference papers.

He is currently a technical expert in Shanghai Huali Microelectronics. He served as many critical roles of process R&D in semiconductor industry. His expertise includes process and equipment co-optimization of ICP, CCP and special etch, advanced patterning and advanced process integration. He also has strong experience of strategic planning and technical roadmap design for top wafer fabrication equipment (WFE) company to drive revenue growth and increase market share in new domain.


Speaker 2: Mr. Zheng Tao, Vice President of etching product center, Leuven Instruments, China

Biography:

Mr. Zheng Tao serves as the vice president of etching product center at Leuven Instruments. He leads the research projects for the development of Chimera 300mm ICP etch systems for advanced node of logic and memory devices. His research focus is on process technology and integration, advanced patterning, ion beam etch technology and plasma physics. Prior to joining Leuven Instruments, he was PMTS in advanced patterning department of imec for over 10 years. Prior to that, he worked for AMEC, Sony, UMCi, Lam research in the field of plasma etch and process development since year 2000. Mr. Zheng Tao received his bachelor degree in Chemistry from Fudan University, China. He holds more than 30 patents and has published ~10 academic papers in international journals and conferences.



Abstract:

Part I Plasma dry etch 等离子体干法刻蚀
ØWhat do we make? Plasma etch是用来做什么的?
ØHow do we do it? 怎么做?
ØWhat is the requirements? 需要什么样条件?
Ø
Ø等离子体干法刻蚀 Plasma dry etch
ØBasic knowledge 基础知识
ØAnisotropic vs Isotropic 各向异性,各向同性
ØEtch selectivity 选择比
ØPR strip去胶工艺
ØPlasma etch tool introduction 刻蚀机简介

Ø休息一下, LAM and TEL Etch tool history

ØLearn from the history从历史中学习: etch tool evolving history 刻蚀机的演进史, Plasma technology evolving history 等离子体的演进史,
Ø
ØPlasma etch deep dive 等离子体刻蚀进阶
ØKey specs and etch parameters 刻蚀的关键spec与参数
ØDry etch process control 刻蚀工艺控制的方法
ØEtch profile tuning aspects; Profile相关: Micro-trench/Notching, striation, RIE LAG
ØProduction aspects 大量产相关

Part II : Advanced Patterning 先进图案

ØWhat do we make? Plasma etch是用来做什么的?
ØHow do we do it? 怎么做?
ØWhat is the requirements? 需要什么样条件?
Ø
Ø等离子体干法刻蚀 Plasma dry etch
ØBasic knowledge 基础知识
ØAnisotropic vs Isotropic 各向异性, 各向同性
ØEtch selectivity 选择比
ØPR strip去胶工艺
ØPlasma etch tool introduction 刻蚀机简介
Ø
Ø LAM and TEL Etch tool history
ØLearn from the history从历史中学习: etch tool evolving history 刻蚀机的演进史, Plasma technology evolving history 等离子体的演进史,
Ø
ØPlasma etch deep dive 等离子体刻蚀进阶 10min 10页
ØKey specs and etch parameters 刻蚀的关键spec与参数
ØDry etch process control 刻蚀工艺控制的方法
ØEtch profile tuning aspects; Profile相关: Micro-trench/Notching, striation, RIE LAG
ØProduction aspects 大量产相关