|
Dr. Mengnan Ke is an Associate Professor at the Institute for Multidisciplinary Sciences, Yokohama National University, Japan. He received his B.E. degree in Microelectronics from South China University of Technology in 2012 and his M.E. and Ph.D. degrees in Electrical Engineering from the University of Tokyo in 2015 and 2018, respectively. He previously worked as an Assistant Professor at Tokyo University of Science, Japan, from 2018 to 2021 and Chiba University, Japan, from 2021 to 2024. His research interests include new channel material MOSFETs, interface physics, and advanced transistor technologies. He has led multiple JST and JSPS research projects and has published several papers as the first author in IEDM and IEEE Transactions on Electron Devices.
|