Ma Kwok-wai graduated in Hong Kong Polytechnic University with B.Eng. and Ph.D. respectively in 1988 and 1995. Dr. Ma joined Infineon Technologies in 2005 and is currently Director in Industrial Power Control Division, responsible for business development of high power semiconductor in Asia-Pacific region, with special focus in new product, new technologies and new application Dr. Ma is member of IEEE and Power Electronics Society with over 20 publications in power electronics. He had also served as reviewer for IEEE APEC. Abstract：
The ever-increasing power requirement in renewable energies, traction and power transmission and distribution applications are continuously pushing the technology limits of high power semiconductor especially IGBT, regarding the maximum current rating and maximum current density. Innovation in IGBT chip and packaging technologies are both required to achieve breakthrough in chip current density as well as package current rating limit.
In this seminar, several latest innovations in high power IGBT chip and packaging technologies will be presented. The .XT packaging technology with IGBT5 chip enable reliable IGBT module operation at Tvjop of 175oC or ten-fold increase in operation lifetime. The reverse-conduction IGBT with diode control (RCDC) technology enable monolithic functional integration of IGBT and diode, led to 33% increase in chip current density. Finally, the XHP package offers current rating scalability by easy paralleling of standardize module packages. |
