Somit Joshi is an accomplished senior executive in the High Technology sector and a solid record of increasing sales and product success in both domestic and international markets.
Over 18+ years career he has performed a variety of leadership roles with broad expertise in P&L management, marketing, product development, product differentiation, customer support, and complex project management. Considerable experience working with geographically dispersed teams, international projects and successful management of cross-functional programs. Currently, as Sr. Director of Marketing, MOCVD, Veeco Corporation, he directs the marketing effort for Veeco’s MOCVD business for the Power Semiconductor industry. Before Veeco, Somit gained extensive experience in creating and executing product and business strategies in the semiconductor market for KLA-Tencor in Milpitas, Ca.
He completed his graduate studies from University of Central Florida & Southern Methodist University and his Bachelor of Science in Engineering from IIT (Indian Institute of Technology) in India.
Somit resides in New Jersey, USA with his wife and two children. Abstract：
Emerging mid and high voltage applications in power supplies, alternate energy and data centers are requiring improved power efficiencies, higher operating temperatures and system size reductions. GaN delivers on these parameters over Si. With advancements in MOCVD of GaN on Si substrates, an economically viable alternative to Si has emerged. To meet the system level yield, reliability and cost targets , the industry requires MOCVD process to deliver superior film uniformity, run to run control, dopant control, low defectivity and high uptime. In response to these requirements, Veeco has developed the next generation MOCVD system based on single wafer architecture that has demonstrated industry leading performance at multiple sites. In this paper we will discuss these results as relevant to system performance. |
