Symposium VI: Materials and Process Integration for Device and Interconnection (joint session with Symposium IV)
Symposium Committee
|
Dr. Jiang Yan |
Institute of Microelectronics, CAS |
| Mr. Zhen Guo Co-Chair |
Technologist,Intel, China |
|
Fudan University, China |
|
|
SEMITRAC USA |
|
| Assistant Director, SMIC Tech R&D | |
|
Nissin Ion Equipment,Japan |
|
|
Dr. Ganming ZHAO |
Applied Materials |
|
Dr. Zheyao Wang |
Tsinghua University, China |
|
Lam Research, USA |
|
|
Dr. Da Zhang |
Freescale,USA |
|
Dr. Larry Zhao |
Lam Research, USA |
Symposium VI: Materials and Process Integration for Device and Interconnection
- Key process module development and integration
- Materials for 45 nm, 32 nm and 22 nm nodes of semiconductor manufacturing
- Reliability of copper/low-k interconnect
- High-k/metal gate and future transistors
- Plasma assisted material processes
- Implantation and millisecond anneal
- Strained silicon process and integration
- Cleaning technology in manufacturing
- Innovative metrology for 45nm and beyond