Naiqian ZHANG received his Bachelor’s Degree in Electronic Engineering from Tsinghua University in 1995 and Ph. D. in Electrical and Computer Engineering from University of California, Santa Barbara in 2002. During his doctoral studies, he demonstrated the first GaN power device passing the theoretic limit of SiC switching devices. During his career in RFMD and Fultec, he developed GaN high power amplifiers, broad-band power ICs, and high voltage GaN switches. He co-founded Dynax Semiconductor in 2007 and served as its president since then. Dynax is the first company in China to commercially produce GaN electronic devices. Abstract：
GaN Power Amplifiers for 4G Base-station
Featuring broad bandwidth, excellent linearity and high efficiency, GaN HEMT power amplifier draws great attention from telecom equipment manufacturers world-wide. Here in this presentation, a new player in GaN HEMT industry, Dynax Semiconductor Inc. and its product are introduced. Dynax Semiconductor set up the first commercial GaN HEMT production line in China for cellular applications, producing devices with 48V operation voltage. The product series feature output power up to 330 W, and internal matched to LTE bands. Test results indicate its promising linearity and efficiency, making it an ideal choice for high efficiency amplifications. |
