| ** | to designate keynote talk - 30 min | Sponsored by: |
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| * | to designate invite talk - 25 min | |||
| to designate regular talk - 15 min |
Sunday, March 14, 2021 Shanghai International Convention Center
Meeting Room:
Session I:CMP Integration
Session Chairs: Xin-Ping Qu
| *13:30-13:55 | Galvanic Corrosion Caused by Device Structure in Chemical Mechanical Planarization |
| Lei Wang, Zhejiang Hikstor Technology Co. Ltd | |
| *13:55-14:20 | Copper corrosion issue analysis and study on advanced cmp process |
| Lei Zhang,Shanghai Huali Integrated Circuit Corporation | |
| 14:20-14:35 | Post CMP Cleaning Study Of Ceria Slurry |
| Lei Wang, Zhejiang Hikstor Technology Co. Ltd | |
| 14:35-15:00 | Coffee Break |
Session II: COMPOUND CMP
Session Chair: Bao-Guo Zhang, Weili Liu
| *15:00-15:25 | Challenges in Chemical Mechanical Polishing and Post CMP Cleaning of GaAs and InP |
| Baoguo Zhang, Hebei University of Technology | |
| *15:25-15:50 | The Investigation of SiC CMP with High Efficiency |
| Weili Liu, Shanghai Institute of Microsystem and Information | |
| 15:50-16:05 | Effect of Oxone and Peroxodisulphates on the Chemical Mechanical Polishing Efficiency of C-plane GaN |
| Wang Yazhen, Hebei University of Technology | |
| 16:05-16:20 | Preparation of ZnO doped SiO2 Abrasive and Chemical Mechanical Polishing Performance on C-plane Sapphire Substrate |
| Ziyang Hou, Hebei University of Technology | |
| 16:20-16:35 | Analysis of Main Physical Factors of Chemical Mechanical Polishing About Lithium Tantalate |
| Ye Li, Hebei University of Technology |
Monday, March 15, 2021 Shanghai International Convention Center
Meeting Room:
Session III: CMP CONSUMABLE and characterization
Session Chair: Yuchun Wang
| **8:30-9:00 | TBD |
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| *9:00-9:25 | Customizing CMP Pads |
| Prof. Sanha Kim, Korea Advanced Institute of Science and Technology | |
| *9:25-9:50 | Explore the pathway on CMP pad with CMC materials |
| Katrina Mikhaylich, Sr. Director, CMP Technology., Applied Materials | |
| *9:50-10:15 | Surface analysis in electronic material and its applications on CMP |
| Yulong Wu, Applied Materials (China) | |
| *10:15-10:30 | Coffee Break |
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Session IV: metal CMP
Session Chair: Jing Xun Fang
| 10:30-10:45 | Chemical Mechanical Polishing (CMP) of Ru using Periodate Oxidant: Polishing Mechanism and Challenges |
| Jie Cheng, China University of Mining and Technology-Beijing | |
| 10:45-11:00 | Mechanical and Chemical Effect on Cu/Ru Patterned wafer CMP |
| Chenwei Wang, Hebei University of Technology | |
| 11:00-11:15 | Effect of FA/O II Surfactant as a Complex Non-ionic Surfactant on Copper CMP |
| Wang Yazhen, Hebei University of Technology |
Session V: CMP process control
Session Chair: Shoutian Li
| 11:15-11:30 | Successful iAPC controlling for solution of Endpoint Missing and T-Put improvement in CMP |
| Junjie Hu, Applied Materials | |
| 11:30-11:45 | Research on Ultra-Precision Polishing process of semiconductor wafer surface based on Disc Hydrodynamic polishing |
| Jiang Xiang-min, Tianjin University | |
| 11:45-12:00 | Effect of Characteristics of Cerium Oxide Particles on Chemical Mechanical Polishing |
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Zhu Yebo, Hebei University of Technology |
| 12:00-13:30 | Lunch Break |
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Session VI: CMP modeling
Session Chair: Ping Zhou
| *13:30-13:55 | Multiscale contact behavior in CMP and its correlation with polishing pad properties |
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Ping Zhou, Dalian University of Technology |
| 13:55-14:10 | Investigation of Factor Inducing Edge over Erosion during Chemical Mechanical Polishing |
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Lixiao Wu, Lanzhou University of Technology |
| 14:10-14:25 | Research on the Formation of Sub-nano Depth Scratches on the Crystal Surface During Chemical Mechanical Polishing |
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Han Xiaolong, Dalian University of Technology |
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Session VII: Post CMP cleaning
Session Chair: Xin-Chun Lu
| 14:25-14:40 | Steady Clean for Stable Particle Performance Improvement |
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Yunlong Wu, Applied Materials |
| 14:40-14:55 | Post CMP Cleaning for Nano Ceria in HNO3-H2O2-DIW Solutions |
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Bingbing Wu, Fudan University |
| 14:55-15:10 | Effects of surfactants on Cu-Co galvanic corrosion in post-CMP cleaning |
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Wang Yazhen, Hebei University of Technology |
| Poster Session: | |
| A Novel Approach of Motor Torque Endpoint Control in Dielectric CMP | |
| Changxing Tan, Applied Materials China | |
| IAPC WiW control ‘150mm’ Wafer Edge Profile | |
| Junyi Hu, Applied Materials | |
| Enhancement of process stability by using HPPC | |
| Yongbin Wei, Applied Materials | |
| Wafer Far Edge Nano Size Particle Desica Clean Solution on Si CMP | |
| Wang Lin, Applied Materials (China) | |
| Evo Head and WiW iAPC for ILD CMP Far Edge Profile Control | |
| Youlai Xiang, Applied Materials (China) | |
| A novel Vapor dryer module for CMP cleaning in advanced logic nodes’ manufacture | |
| Ying Xu, Applied Materials | |
| Improving Profile Uniformity in Oxide CMP Process Through Controlling Polishing Pad’s Groove Pattern and Pad Conditioning | |
| Wan Baicen, Semiconductor Manufacturing North China(Beijing) Corp | |
| RTPC Algorithm Optimization to Eliminate Wafer Edge Residual for Cu CMP | |
| Yunhong Hou, Applied Materials | |
| Research on improvement of CMP thickness uniformity control on wafer edge defocus defects | |
| ZengyiYuan, Shanghai Huali Integrated Circuit Corporation | |
| SAC CMP Uniformity of Selectivity Significant Improvement for 14 nm CMOS Process | |
| Guoan Wu, Applied Materials (China) | |
| Study on dispersion of nano-diamond during the heat treatment process | |
| Xiaoguang Guo, Dalian University of technology | |
| Preclean effective application for Poly film defect performance | |
| Jian Xiao, Applied Materials | |
| DEVELOPMENT OF A STANDARD EVALUATION SYSTEM TO CHARACTERIZE AND QUANTIFY PAD FOAM MORPHOLOGY FOR | |
| ZHICHAO LI, North Carolina Agricultural & Technical State University | |
| Chemical Mechanical Polishing of Semiconductor Wafers: Surface Element Modeling and Simulation to Predict Wafer Surface | |
| ZHICHAO LI, North Carolina Agricultural & Technical State University | |
| Effect of PASP Inhibitor on Cu-Co Galvanic Corrosion | |
| Haoran Li, Baoguo Zhang, Ye Li, Xiaofan Yang, Wei Wei, Zhaoxia Yang, Hebei University of Technology | |
| Role of 1-H Carboxyl Benzotriazole as Corrosion Inhibitor for Cobalt "Bulk Step" CMP in H2O2 Based Alkaline Slurry | |
| Shuangshuang Lei, Hebei University of Technology | |
| Effect of TTA-K as Inhibitor on Cu/Ru/TaN Structure based Patterned Wafer CMP | |
| Tian Yuan, Hebei University of Technology | |
| INVESTIGATION ON THE MATERIAL REMOVAL PROCESS OF COPPER BY A SINGLE PAD ASPERITY | |
| Haipeng Li, Dalian University of Technology | |
| Measurement and characterization of surface roughness of polishing pad | |
| Changyu Hou, Dalian University of Technology | |
| A Novel High-performance pad conditioner for 3D NAND STI CMP | |
| Mengxia Li, Applied Materials | |