| Sun Qian |
Dr. Qian SUN holds a Professorship at Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, and a joint position of VP of GaN-on-Silicon LEDs at Lattice Power Corporation. He received his BS degree in Material Physics from University of Science & Technology of China in 2002 and Ph.D. in Electrical Engineering from Yale University in 2009. He has won the First Prize of the National Technological Invention Award of China, National '1000 Youth Talents' Award (2011) from the Chinese Central Government, Henry Prentiss Becton Prize (2010) from Yale University, and Guo Moruo Presidential Fellowship (2002) from USTC. Abstract ....... Direct growth of III-Nitride semiconductors on large diameter silicon is a potential game-changing technology to the LED and laser industry. With a proprietary stress engineering technology, we have overcome the large mismatch in lattice constant and thermal expansion, and mass produced crack-free GaN-on-Si epitaxial film with a crystalline quality comparable to that grown on sapphire. The high-quality GaN-on-Si platform has enabled us to realize highly efficient blue, white, and UV LEDs, as well as blue/violet laser diodes. The as-manufactured 45 mil × 45 mil GaN-on-Si white LEDs deliver an efficacy of 160 lm/W at 350 mA, and have passed the 10,000-hour LM80 reliability test. The product performance of thin-film high-power UVA LEDs with an emission wavelength ranging from 365 to 405 nm will be presented at the conference. Room temperature continuous-wave electrically injected blue/violet laser diode on Si will be demonstrated for the first time in the world. | |
