Symposium VI: Materials and Process Integration for Device and Interconnection (joint session with Symposium IV)
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13:30-13:35 |
Open speech
Jiang Yan / Beichao Zhang |
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*13:35-14:00 |
Scaling Limits of Nanoionic Devices
Dr. Victor Zhirnov, Semiconductor Research Corporation |
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*14:00-14:25 |
Flowable oxide: N10 STI Gapfill Challenges
Young Lee, DSM, CVD, AMAT |
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14:25-14:40
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PMG Effects on AL/HfO2 High-k PMOS Capacitors
Lihong XIAO, SMIC |
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14:40-14:55 |
Basic principles of Chemical Vapor Deposition technique at atmospheric pressure to synthesis of cadmium telluride and its implementation as diode.
Iker Rodrigo Chávez-Urbiola, CINVESTAV-Qro |
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14:55-15:10 |
Study of electrically active defects in epitaxial layers on silicon
Eddy Simoen, IMEC |
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15:10-15:25 |
Investigation of Seal Nitride process in 32nm beyond HK/MG technology
Youfeng He, SMIC |
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15:25-15:40 |
Coffee Break |
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Session II: FEOL Metal and Thermal Films |
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*15:40-16:05 |
A Conformal Low Resistivity Fluorine Free Tungsten for FINFET Metal Gate and 3D Memory Applications
Xinyu Fu, MDP, AMAT |
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*16:05-16:30 |
ALD Nanolayers for Novel More than Moore Devices
Peter M. ZAGWIJN, ASM International N.V. |
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16:30-16:45 |
A STUDY OF ALD TIN/TISIN FILM FOR REPLACEMENT METAL GATE APPLICATION
Jianhua Xu, SMIC |
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16:45-17:00 |
Optimization of Tantalum Nitride films as Aluminum barrier in Metal Gate for 28-nm-node
Xiaona Wang, SMIC |
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17:00-17:15 |
Investigation of embedded silicon germanium typical defect solution for advanced CMOS process
TU huojin, SMIC |
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17:15-17:30 |
Confirmation of the surface smoothing effect of atomic layer deposition and the physical mechanism responsible for such an effect
Wai Shing Lau, Zhejiang University |
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17:30-17:45 |
Effect of Time and Temperature on Epitaxy Growth
AANAND, Asia University |
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17:45-18:00 |
Managing hazardous process exhausts in HVM of advanced devices
Zhen Ma, Edwards Ltd. |
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Poster Session:
Coffee Break |
Location: Foyer of Yangtze River Hall
Session Chairs: JiaXian Ni / JiangYan / Xiaoping / Beichao
The transformation to cadmium oxide through annealing of cadmium oxide hydroxide deposited by ammonia-free SILAR method
Iker Rodrigo Chávez-Urbiola, CINVESTAV-Qro
Key Technologies of Copper barrier/seed PVD system for Copper Interconnections in 55-28nm technology
Chong-Jun Zhao, North Microelectronics, Beijing
Top Metal Layer Electro Plating Edge Bevel Removal Improvement Study
Jianqiang Liu, SMIC
Study on the Influence of Contact Glue Layer Growth Condition on the Quality of Gap Fill Tungsten Layer
Jianqiang Liu, SMIC
Reduction of micro particle defects in tensile silicon nitride film the for advanced nodes
Kun Chen, SMIC
DCE Application In Oxide Furnace
Guan Yinglai, SMIC
The characteristics of epi-Si thin film in electron cyclotron resonance plasma examined by an integrated plasma diagnostic sub-system
Sheng-Kai Jou, National Central University
A Study on Breakdown Voltage Improvement for ULK Materials
Xun Gu, etc., SMIC
THE EFFECT OF BARRIER METAL PROCESS ON VIA CONTACT RESISTANCE
Jiquan Liu, SMIC
Glass Wafer Clamping Performance Improvement with Thicker CB ESC
Lei Wan, AMEC
Low cost 0.18um Process with MUV exposure systems
Weifeng Li, HHGrace
Analysis of Short Channel Effects for 14nm and beyond Si-bulk FinFET
Yang Xiaolei, SMIC
14NM Finfet Device Electronic Study
Xinyun Xie, SMIC
Sub-Fin Solid Source Doping in the 14nm and sub-14 FinFET Device
Yan Wen, SMIC
The preparation of polymer/metal composite microsphere and their application in anisotropic conductive films
Ting Xu, Donghua University |
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Monday, March 14, 2016 Shanghai International Convention Center
Session III: Materials and Process Integration
Session Chairs: Ran Liu / JianHua Ju |
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8:30-8:35 |
Open speech
Jiang Yan / Beichao Zhang |
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*8:35-9:00 |
Integration and Devices for 3D-Nand
Zhaoyun Tang, IMECAS/XMC |
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*9:00-9:25 |
Back Gate Recovery for FDSOI Devices
Jing Xu, Institute of Microelectronics of Chinese Academy of Sciences |
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9:25-9:40 |
Series Resistance of Signal Line in Graphene Coplanar Waveguide
Zidong Wang, Peking University |
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9:40-9:55 |
Reduction of “Dark-Gate” defects in Replacement-Metal-Gate process and Middle-of-line contacts for Advanced Planar CMOS and FinFET technology
Wen Pin Peng, GLOBALFOUNDRIES |
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9:55-10:10 |
Coffee Break |
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Session IV: Symposium IV & VI Joint session
Session Chairs: Jiang Yan / Beichao Zhang |
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**10:10-10:40 |
FinFET technology: Overview and status at 14nm node and beyond
Dr. Min-Hwa Chi, SMIC |
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**10:40-11:10 |
Challenges in BEOL (Back End of Line) Cu Integration at the 7nm Node and Beyond
Dr. Chris Penny, IBM |
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**11:10-11:40 |
Future FPGA – Process Technology Challenges and Enablement
Ning Cheng, Altera |
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**11:40-12:10 |
Radio-Frequency Flexible and Stretchable Electronics
Zhenqiang Ma, University of Wisconsin at Madison, USA |
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12:10-13:30 |
Lunch Break |
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Session V: FEOL and BEOL Films
Session Chairs: Chao Zhao / YuLong Jian |
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*13:30-13:55 |
New applications and challenges of dielectric films at 14nm FinFET technology and beyond
Hao Deng, TD-SMIC |
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*13:55-14:20 |
INNOVATIVE SOLUTIONS FOR LOW-K INTEGRATION BEYOND 10 NM TECHNOLOGY NODE
Mikhail Baklanov, IMEC |
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*14:20-14:45 |
Application of Cobalt Electroplating for IC Interconnects
Natalia Doubina, ECP, Lam Research |
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14:45-15:00 |
A novel TiN film prepared by high-performance Metal Hard-mask PVD System In 28/20 nm Technology Node
Jianqiang Liu, SMIC |
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15:00-15:15 |
Sputtered molybdenum thin films and the application in CIGS solar cells
Dong Zhou, Hebei University |
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15:15-15:30 |
Coffee Break |
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Session VI: New Materials and Integration
Session chairs: Zhen Guo / Xiaoping Shi |
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*15:30-15:55 |
High Performance Electronics Based on Novel Two Dimensional Materials
Yanqing Wu, HUST (Huazhong University of Science & Technology) |
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*15:55-16:20 |
Advanced film and dimension characterization on 3 dimensional structure
Dr. Tae-Gon Kim, IMEC |
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16:20-16:35 |
A review on possibilities of using carbon nanotubes in organic solar cells
Danish Khan, North China Electric Power University |
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16:35-16:50 |
Observation of Sub-20nm Line-defects in Graphene by Friction Force Microscopy
Yuehui Jia, Peking University |
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16:50-17:05 |
Silicon Based Nanostructures for Nanoelectronics and Photovoltaics
Kunji Chen1*, Yongxing Zhang2 etc., 1 State Key Laboratory of Solid State Microstructures, School of Electron Science and Engineering, Nanjing University, 2 Semiconductor Manufacturing International Corporation |
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17:05-17:20 |
Preparation and composition of the coating of phosphor-in-glass with gradient refractive index
Yong Zhuo, Wuhan University of Technology |
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17:20-17:35 |
Reducing the environmental impact of semiconductor manufacture
Mike Czerniak, David Hacker, Edwards
Hartmut Schneider, M+W |
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