| ** | to designate keynote talk - 30 min | Sponsored by: |
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| * | to designate invite talk - 25 min | |||
| to designate regular talk - 15 min |
| Online Conference | |
| Parallel Symposium Oral Sessions: | June 29-July 17, 2020 |
Symposium Chair: Xin-Ping Qu
Symposium Co-chairs: Yuchun Wang and Jingxun Fang
| Session I: CMP Integration | |
| ** | Lead the future |
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Tsujimura Manabu, Ebara Corp. |
| * | Solving CMP challenges for chemically stable materials and 3D shapes |
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Hitoshi Morinaga, FUJIMI Incorporated |
| * | Post CMP Cleans Evolution and Defect Improvement Approaches |
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Katrina Mikhaylichenko, Applied Materials |
| Session II: CMP Slurry | |
| * | Stop on nitride slurry development |
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Shoutian Li, Anji Microelectronics |
| Session III: FEOL CMP | |
| * | Novel Abrasion-free CMP Technology with High Performance Polishing Slurry |
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Yuling Liu, Hebei University |
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Study of Ceria Settling in CMP Slurry |
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Li Zhang, Anji Microelectronics |
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iAPC WiW for Wafer-Edge Profile Control in FEOL CMP |
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Yunlong Wu, Applied Materials |
| Session IV: CMP Profile | |
| * | Sidewall characterization and 3D-AFM applications |
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Tae-Gon Kim, Hanyang University |
| * | Pattern loading effect optimization of BEOL Cu CMP in 14nm technology node |
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Zhang Lei, Huali |
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High-K Metal Gate Al-CMP within die Uniformity and Selectivity Study |
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Ziheng Li, SMNC |
| Session V: Metal CMP(I) | |
| * | The adsorption and removal of corrosion inhibitors during metal CMP |
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Jin-Goo Park, Hanyang University |
| Session VI: Modeling | |
| * | Modeling of chemical mechanical polishing incorporating the effect of micro contact of polishing pad |
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Ping Zhou, Dalian University of Technology |
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Molecular dynamics study on sub-nanoscale removal mechanism of 3C-SiC in a fixed abrasive polishing |
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Piao Zhou, Nanjing University of Aeronautics and Astronautics |
| Session VII: Metal CMP(II) | |
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Role of Slurry Chemistry for Defects Reduction during Barrier CMP |
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Chenwei Wang, Hebei University of Technology |
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Role of slurry Additions on Chemical Mechanical Polishing of Cu/Ru/TEOS in H2O2-based Slurry |
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Chao Wang, Hebei University of Technology |
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Effect of various Surfactants on surface Roughness Reduction during Cobalt "Buff step" CMP |
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Yuanshen Chen, Hebei University of Technology |
| Session VIII: Compound CMP | |
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Mechanism Analysis of Silicon Surface and Carbon Surface CMP of 4H-SiC Wafer |
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Gaoyang Zhao, Shanghai Institute of Microsystem and Information Technology |
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Investigation on the gallium nitride polishing process under hybrid-field effects |
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Zhigang Dong, Dalian University of Technology |
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Effect of potassium salts on the Chemical Mechanical Polishing Efficiency of Sapphire Substrate |
| Lu Yanan, Hebei University of Technology | |
| Conference Poster Session: | June 26-July 17, 2020 |
| Study on Cleaning Process of Large Size Sapphire Substrate after CMP | |
| Zhen Liang, Hebei University of Technology | |
| A Study of Causes and Improving Methods of Chipping in BSI Process | |
| YurongCao, HLMC | |
| Study on the Properties of Silica Colloid Prepared by Different Processes in Silicon Wafer CMP | |
| Li Weiwei, Hebei University of Technology | |
| Metal Clear Sensor- A Residual Free Solution for Al CMP in 28HKMG Technology | |
| Yunhong Hou, Applied Materials China | |
| Far-Edge “Check Mark” Profile Control for CMP | |
| Youlai Xiang, Applied Materials China | |
| AMAT High Performance Pad Condition(HPPC) --- A Novel Process Control System | |
| Qiaofeng Zhang, Applied Materials China | |
| Creating a Cu CMP ISRM Segment to Prevent Cu Residue Defect in 28nm Logic Technology | |
| Wang Lin, Applied Materials China | |
| TiN CMP Endpoint Development for 45nm PCRAM | |
| Wang Lin, Applied Materials China | |
| Full Vision XE for Profile Control in Advanced Applications | |
| Ying Xu, Applied Materials | |
| FullVision™ XE with MPC In-Situ Profile Control for Oxide CMP | |
| Changxing Tan, Applied Materials | |
| Impact of bevel condition on STI CMP scratch | |
| Meng yuanyuan, HLMC | |
| Material removal mechanism of copper during the chemical mechanical polishing process under pad-asperity scale | |
| Lin Wang, Dalian University of Technology | |
| Effects of Heat Treatment in Air Environment on the Dispersivity of Nanodiamond | |
| Xiaoguang Guo, Dalian University of Technology | |
| Effect of Complexing agent in Slurry on CMP property for Barrier Material Cobalt | |
| Jinsong Zuo, Tianjin University of Technology | |
| Investigation on Alkaline Based Fumed Silica Slurry pH Effect on Oxide CMP Micro Scratch and Improvement method | |
| Xueliang Li, Cabot Microelectronics Corporation | |
| Recycling Slurry by Bleed and Feed Method for Chemical Mechanical Planarization of Mono Silicon Wafer | |
| Wei-Chin Pu, Chao-Chang Chen, National Taiwan University of Science and Technology | |
| Role of Diethylenetriamine Pentaacetate Pentapotassium in Barrier Slurry for Copper Barrier Chemical Mechanical Planarization | |
| Huo Zhaoqing, Hebei University of Technology | |
| Effect of Potassium Oleate as the Inhibitor on Copper CMP | |
| Yang Chenghui, Hebei University of Technology | |
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Effects of different inhibitors on Cu-Co galvanic corrosion in post CMP cleaning |
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Xiaoqin Sun, Hebei University of Technology |
| Effect of chelators on the removal of BTA in post-CMP cleaning | |
| Liu Mengrui, Hebei University of Technology | |
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Effect of TT-LYK on Copper CMP with Ru/Ta as barrier/liner |
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Xue Zhang, Hebei University of Technology |
| Effect of Various Complexing Agents for Cobalt "bulk step" Chemical Mechanical Planarization | |
| Yundian Yang, Hebei University of Technology |