(** to designate keynote talk, * to designate invite talk)
Monday, March 18, 2019 Shanghai International Convention Center
Meeting Room: 3rd Floor Yellow River Hall 黄河厅
Session I: Neuromorphic Computing Technology I
Session Chairs: Ru Huang & Chung Lam
| **13:30–14:00 | Non-volatile Memory for Neuromorphic Computing |
| Sangbum Kim, Seoul National University | |
| *14:00–14:25 | Towards Efficient AI On-a-chip: Joint Hardware-algorithm Approaches |
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Yu Cao, Arizona State University |
| *14:25–14:50 | Computing with Memristive Devices and Arrays |
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J. Joshua Yang, University of Massachusetts |
| 14:50–15:05 | Efficient Weight Mapping Scheme for Analog RRAM based Neuromorphic Computing Circuit |
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Shuanglin Zhang, Huaqiang Wu, Bin Gao, He Qian, Tsinghua University |
| 15:05–15:20 | Reconfigurable Logic Computing in Memristive Crossbar Array for Arithmetic Logic Unit Design |
| Long Cheng, Yi Li, Miaomiao Jin, Siyu Hu, Kangsheng Yin, Zhuorui Wang, Yaxiong Zhou, Xiangshui Miao, Huazhong University of Science and Technology | |
| Ting-Chang Chang, National Sun Yat-Sen University | |
| 15:20–15:30 | Coffee Break |
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Session II: Advanced Devices and Process Technology I
Session Chair: Cor Claeys
| *15:30–15:55 |
Design & Technology Co-optimization for High Performance & Low Power Mobile SoC Productization |
| Jun Yuan, Qualcomm | |
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*15:55–16:20 |
Spin-Transfer-Torque Magnetic Random Access Memory: Co-Development of New Technologies and Architectures |
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Nuo Xu, Samsung Electronics |
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*16:20–16:45 |
Super Steep Switching CMOS Device Technology |
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Changhwan Shin, Sungkyunkwan University |
| 16:45–17:00 | Ultra-dense Silicon Nanowires with 3D Oblique Sidewall Growth |
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Xiaoxiang Wu, Han Yin, Shun Xu, Jun Xu, Yi Shi, Kunji Chen, Linwei Yu, Nanjing University |
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Tuesday, March 19, 2019 Shanghai International Convention Center
Meeting Room: 3rd Floor Yellow River Hall 黄河厅
Session III: Advanced Devices and Process Technology II
Session Chair: Ming Li
| *8:30–8:55 | Scaling and Printing Electronics Using Nanomaterials |
| Aaron D. Franklin, Duke University | |
| 8:55–9:10 | Investigation on LDMOS Characteristics of Layout Dependence in FinFET Technology |
| Gang Wang, Byunghak Lee, Guiying Li, Nan Wang, Mike Tang, Kellin Ding, Breeze Zhou, Jianhua Ju, Semiconductor Manufacturing International (Shanghai) Corporation | |
| 9:10–9:25 | A Novel 500-700V Ultra High-Voltage LDMOS with Low On-State Resistance by Multiple Local RESURF Enhancement Technology |
| Mao Li, DeYan Chen, Dae-Sub Jung, XueJie Shi, Semiconductor Manufacturing International (Shanghai) Corporation | |
| *9:25–9:50 | AC NEGF Simulation: Efficient Implementation and Application to Nanosheet MOSFETs |
| Sung-Min Hong, Gwangju Institute of Science and Technology | |
| 9:50–10:05 | Coffee Break |
Session IV: Negative-Capacitance FET
Session Chairs: Minhwa Chi & Jong-ho Lee
| **10:05–10:35 | Steep-Slope Hysteresis-Free Negative-Capacitance 2D Transistors |
| Peide Ye, Purdue University | |
| *10:35–11:00 | Understanding of Negative Capacitance in Nanoscale by Two-dimensional Phase Field Simulations |
| Cheol Seong Hwang, Seoul National University | |
| *11:00–11:25 | New Understanding of Negative Capacitance Devices for Low-Power Logic Applications |
| Qianqian Huang, Peking University | |
| 11:25–11:40 | Investigation of Negative Capacitance Effect from Domain Switching Dynamics |
| Kunkun Zhu, Qianqian Huang, Huimin Wang, Mengxuan Yang, Yang Zhao, Ru Huang, Peking University | |
| 11:40–13:30 | Lunch Break |
Session V: Neuromorphic Computing Technology II
Session Chairs: Yimao Cai & Peng Zhou
| **13:30–14:00 | Accelerating Deep Neural Networks with Analog Memory Devices |
| Geoff Burr, IBM | |
| *14:00–14:25 | ReRam for Alternative Computing Architectures |
| Khaled N. Salama, UCSD | |
| 14:25–14:40 | A Mixed Hardware-software Investigation on 1T1R RRAM based Convolutional Neural Network for Neuromorphic Computing |
| Jia Chen, Wenqian Pan, Yi Li, Rui Kuang, Nian Duan, Long Cheng, Zhuorui Wang, Xiangshui Miao, Huazhong University of Science and Technology | |
| Ting-Chang Chang, National Sun Yat-Sen University | |
| 14:40–14:55 | The Impact of Interconnect Resistance on one-selector one-resistor (1S1R) Crossbar Array Performance |
| Yujia Li, Tsinghua University, Beijing University of Technology | |
| Bin Gao, Huaqiang Wu, He Qian, Tsinghua University | |
| Wanrong Zhang, Beijing University of Technology | |
| 14:55-15:10 | Effect of Different Top Electrodes on Performance of Low-power Flexible RRAM based on TE/HfO2/TiN Cell |
| Jingwei Zhang, Fang Wang, Jiaqiang Shen, Wenxi Li, Zhengchun Yang, Kailiang Zhang, Tianjin University of Technology | |
| 15:10–15:25 | Coffee Break |
Session VI: Advanced Devices and Process Technology III
Session Chair: Wensheng Qian
| *15:25-15:50 | Fast Development of High-performance ICs in AI/IoT Era |
| Min-Hwa Chi, SiEn (Qingdao) Integrated Circuits Cor. | |
| *15:50-16:15 | Defect Assessment in AlN Nucleation Layers Grown on Silicon and Silicon-on-Insulator Substrates |
| Eddy Simoen, IMEC | |
| 16:15-16:30 | Flicker Noise Simulation by Physical Trap Model |
| YiYu Chen, YongSheng Yang, XueJie Shi, SMIC | |
| 16:30-16:45 | Tri-state Cross Point Memristors based on Heterogeneous van der Waals Structures |
| Kaichen Zhu, X. Liang, B. Yuan, M. A. Villena, F. Hui, Y. Shi, M. Lanza, Soochow University | |
| 16:45-17:00 | Memristor based on High-quality CVD-MoS2 |
| Jiaqiang Shen, Fang Wang, Wenxi Li, Jingwei Zhang, Jinshi Zhao, Kailiang Zhang, Tianjin University of Technology | |
| 17:00-17:15 | Simulation of Low-pass Filter Circuit Based on TiOx-based Memristive Device |
| Jingsi Sun, Yupeng Xing, Fang Wang, Wenxi Li, Kai Hu, Kailiang Zhang, Tianjin University of Technology | |
| 17:15-17:30 | RFFE Integration Design for 5G in 0.13um RFSOI Technology |
| Ruofan Dai, Jiangchuan Ren, Jun He, Jun Xiao, Weiran Kong, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
| 17:30-17:45 | Die Attachment Material based on Micro Silver Paste for the Application of High Powder Device |
| Jinting Jiu, Tetsu Takemasa, Junko Seino, Yoshie Tachibana, Senju metal Industry Co., Ltd. | |
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| Poster Session: | Location: 5th Floor |
| Coffee Break | Optimization of RF performance and reliability of 28V RF-LDMOS |
| Ying Cai, Zhengliang Zhou, Jiye Yang, Jingfeng Huang, Han Yu, Junlang Li, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
| Haifeng Mo, Hu Peng, Yaohui Zhang, System Integration and IC Design Division Suzhou, Institute of Nano-Tech and Nano-Bionics (SINANO), CAS | |
| Impact of Annealing Temperature on Performance Enhancement for Charge Trapping Memory with (HfO2)0.9(Al2O3)0.1 Trapping Layer | |
| Zhenhua Wu, Institute of Microelectronics of Chinese Academy of Sciences | |
| Zhaozhao Hou, Jiaxin Yao, Jie Gu, Huaxiang Yin, University of Chinese Academy of Sciences, Institute of Microelectronics of Chinese Academy of Sciences | |
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Thickness-dominated Forming Conditions of TaOx-based Memristor |
| Chuang Li, Fang Wang, Wenxi Li, Jingwei Zhang, Jinshi Zhao, Kailiang Zhang, Tianjin University of Technology | |
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Comprehensive Investigation of Flat-band Voltage Modulation by High-K NPT for Advanced HKMG Technology |
| Wenjuan Xiong, Qingzhu Zhang, Zhenhua Wu, Institute of Microelectronics of Chinese Academy of Sciences | |
| Jiaxin Yao, Zhaozhao Hou, Huaxiang Yin, University of Chinese Academy of Sciences, Institute of Microelectronics of Chinese Academy of Sciences | |
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A Method to Improve SST Flash Cell Program Function |
| Chong Huang, Peizhong Zhang, Haiyan Qin, Yang Zhou, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
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Conductance Quantization in Oxide-based Resistive Switching Devices |
| Qingxi Duan, Jingxian Li, Jiadi Zhu, Teng Zhang, Jingjing Yang, Yuchao Yang, Ru Huang, Peking University | |
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Thickness Dependence Characteristics of High-κ Al2O3 Based Metal-Insulator-Metal Antifuse |
| Min Tian, Huicai Zhong, Institute of Microelectronics of Chinese Academy of Sciences, University of Chinese Academy of Sciences | |
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A High Efficiency N Channel Single Poly OTP Cell Structure in Standard CMOS Process |
| Yu Chen, Yuan Yuan, Hualun Chen, Yuhua Zhang, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
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Improvement of Cell's Performance for Low Power Self-Aligned Split-Gate SONOS Memory Device |
| Zhaozhao Xu, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
| Kegang Zhang, Wei Xiong, Donghua Liu, Jun Hu, Hualun Chen, Wensheng Qian, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
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Study of 7V Device Application Based on 0.18UM Platform Process |
| Jun Hu, Jike Wu, Xiuliang Cao, Wensheng Qian, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
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A Study of LDMOS BV Improvement by Gate Architecture Optimization |
| Ziquan Fang, Wensheng Qian, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
| Zhaozhao Xu, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
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Study of Drive-current Enhancement and Field Plate Optimization in 500V High-voltage NLDMOS |
| Wenting Duan, Donghua Liu, Wensheng Qian, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
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Benefits of Nitrogen Co-implantation on 28nm SRAM |
| Fanqin, Zhou Xiaojun, Liu Wei, Shanghai Huali Microelectronics Corporation | |
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Study of Ultra High Voltage 500V NLDMOS with Aggressive Design of Drift Region |
| Wenting Duan, Chunyu Yuan, Wensheng Qian, Donghua Liu, HuaHong Grace Semiconductor Manufacturing Corporation | |
| Zhaozhao Xu, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, HuaHong Grace Semiconductor Manufacturing Corporation | |
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Study on the Data Trend of Pitch Line with Pupilgram |
| Xie Weimei, Guo Lianfeng, Yu Shirui, Shanghai Huali Microelectronics Corporation | |
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Crion-A Damage Engineering Solution in Advanced CMOS Devices |
| Xiaoqi Li, Peng Yue, Qintao Zhang, Junfeng Lu, Applied Materials China | |
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ULTIMA HDP CVD® Ultima-X IPMTM--- Extensive Gap Fill Technology |
| Wei Xia, Tengfei Zhang, Lei Zhu, Xianyuan Li, Applied Materials | |
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Significant Improvement of UTS CIS SRAM Vmin by Optimizing LDD Implantation |
| Weiwei Ma, Chao Sun, Yamin Cao, Shanghai Huali Integrated Circuit Corporation | |
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A Norvel Method for STI Top Corner Rounding by Etch Process to Improve Leakage and SRAM Performance |
| Lin Gu, Shanghai Huali Microelectronics Corporation | |
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An effective method to reduce bump defect is investigated |
| Xiang Guangxin, Gong Yiqi, Wei Xiang, Luo Zhigang, Bao Yu, Zhou Haifeng, Fang Jingxun, Albert Pang, Shanghai Huali integrated circuit manufacturing company | |
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A Study of Inductor and its Model in SiGe BiCMOS Process |
| Zhang Jian, Donghua Liu, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
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Improved Ge doped Cap layer for embeded SiGe epitaxial growth in 28 nm CMOS technology |
| Tanjun, Chenyongyue, Huangqiuming, Hongjiaqi, Yanqiang, Zhouhaifeng, Fangjingxun, Shanghai Huali integrated circuit manufacturing company | |
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Optimization of Metal Hard Mask TiN for Tiny Particle Reduction |
| Li xixiang, Bao Yu, Wang Xiaofang, Cao Yanpeng, Zeng Zhaoqin, Zhou Haifeng, Shanghai Huali integrated circuit manufacturing company | |
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SiGe layers defect of 28nm node pMOSFETs in advanced CMOS technology |
| Qiuming Huang, Yongyue Chen, Jiaqi Hong, Qiang Yan, Jun Tan, Haifeng Zhou, Shanghai Huali integrated circuit manufacturing company | |
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Improved Endurance of SONOS Cell by Smart Poly Recessed Method |
| Hualun Chen, Yuanyuan Shan, Yu Chen, Shanghai Huahong Grace Semiconductor MFG | |
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Improved Data Retention of Single Gate PMOS OTP Cell by Dielectric Film Process Optimization |
| Hualun Chen, Yuan Yuan, Yu Chen, Yuhua Zhang, Shanghai Huahong Grace Semiconductor MFG | |
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Investigation of Quantum-Dot Characteristic Based on Different Bulk Silicon FinFET Device Models |
| Jie Gu, Zhaozhao Hou, Jiaxin Yao, Zhenhua Wu, Huaxiang Yin, Institute of Microelectronics of Chinese Academy of Sciences, University of Chinese Academy of Sciences | |
| Zhenhua Wu, Institute of Microelectronics of Chinese Academy of Sciences | |
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Nanometer-thin pure B layers grown by MBE as metal diffusion barrier on GaN diodes |
| Shivakumar D Thammaiah, Lis K. Nanver, Aalborg University, University of Twente | |
| John Lundsgaard Hansen, Aarhus University | |
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Warpage control method in epoxy molding compound |
| Wei Tan, Hongjie Liu, Yangyang Duan, Linlin Liu, Xingming Cheng, Lanxia Li, Jiangsu HHCK Advanced Materials Co., Ltd | |
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Cheng Cheng, School of language and business Jiangsu Normal University |
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EFA Method of AA-BRIDGE-TYPE-DEFECT of Sonos nor Flash |
| Qingwen Zhang, Zhimin Zeng, Yuxiang Zhang, Yuan Wu, Chenjie Zhou, Shanghai Huahong Grace Semiconductor Manufacture Corporation | |
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Performance optimization of HfOx-based transparent RRAM |
| Jinrong Huang, Fang Wang, Luguang Wang, Wei Mi, Baozen Zhou, Kailiang Zhang, Tianjin University of Technology | |
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SRAM standby current fail analysis using OBIRCH, Voltage contrast and junction delineation |
| Jinjin Xie, Xiangbai Ma, Zhimin Zeng, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
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Managing hazardous process exhausts in high volume manufacturing |
| ANDREW CHAMBERS, Edwards Ltd. | |
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AMAT RadianceTMPlus---Improved Solution for Ion-Implanted Anneal |
| Jie Zuo, Lei Zhu, Applied Materials | |
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Turbo Tune Application in Implantation Productivity Improvement |
| Xiaoqi Li, Peng Yue, Qintao Zhang, Junfeng Lu, Applied Materials | |
| Zhenhui Wang, Ya Wang, Semiconductor Manufacturing International Corporation | |
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High Performance NLDMOS with Optimized Channel and Drift |
| Wensheng Qian, Ziquan Fang, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
| Zhaozhao Xu, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
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Impact of Forming Voltage Polarity on HfO2-based RRAM Performance |
| Jian Kang, Zongwei Wang, Yishao Chen,Yichen Fang, Qilin Zheng, Yuchao Yang, Yimao Cai, Ru Huang, Peking University | |
| Jintong Xu, Shanghai Institute of Technical Physics, Chinese Academy of Science | |
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Optimization of Passivation and Top Metal Layer Crack in Temperature Cycle Test of RF-LDMOS |
| Ying Cai, Jingfeng Huang, Han Yu, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
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Product design optimization for prevent Bias Highly Accelerated Stress failure of RF-LDMOS |
| Han Yu, Jingfeng Huang, Ying Cai, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
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The GSG-pad Layout Optimization for Test-key of mm-Wave Devices |
| Quan Wang, Linlin Liu, Yueyi Feng, Wei Zhou, Ao Guo, Hongbo Ye, Yingjia Guo, Shanghai IC R&D Center Co., Ltd. | |
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Investigation of Gate Oxide Preclean Process on Gate Oxide Integrity and Mechanism |
| Qiang Liu, Jun Qian, ShanghaiHuali Microelectronics Corporation, Shanghai | |
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On-Resistance Improvement Impacted by Trapping Effect in Fin-LDMOS Technology |
| Gang Wang, Byunghak Lee, Nan Wang, Kellin Ding, Guiying Ma, SMIC | |
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Tunneling Spin Valves Based on Fe3GeTe2/MoS2/Fe3GeTe2 van der Waals Heterostructures |
| Yan Li, Minhao Zhang, Xuefeng Wang, Nanjing University | |
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Building high performance electronics based on self-assembly silicon nanowires with precise location controls |
| Han Yin, Xiaoxiang Wu, Jun Xu, Kunji Chen, Linwei Yu, Nanjing University | |
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Improvement of SPAD Photon Detection Efficiency with Diffraction Window Layer |
| Feiyang Sun, Zhong Wu, Sihui Zhu, Yue Xu, Nanjing University of Posts and Telecommunications | |
| Yue Xu, National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology | |
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Digital and analog resistive switching with low operation voltage in HfOx-based memristors tuned by oxygen concentration gradient |
| Zhaonan Li, Baoyi Tian, Biao Wang, Huajun Sun, Xiang Shui Miao, Huazhong University of Science and Technology | |
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Best performance of LDMOS Power array with integrating thick Copper in 0.18um BCD Technology |
| Xinjie Yang, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
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Application study of corrosion-resistant coating in gas transportation system |
| Shenghua Zhu, Xingjian Chen, Tom Ni, Advanced Micro-Fabrication Equipment Inc. | |
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3D integration of ultra-dense stacked silicon nanowires for multichannel field effect transistors |
| Xiaoxiang Wu, Han Yin, Shun Xu, Jun Xu, Yi Shi, Kunji Chen and Linwei Yu, Nanjing University | |
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TCAD Analysis about PMOS Doping Profile based on 28nm Technology |
| TaoTang, YangKui Lin, XueJie Shi, Semiconductor Manufacturing International (Shanghai) Corporation | |
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The effects of carbon on phosphorus diffusion and activation in Ge |
| Xiangyang Hu, Bingxin Zhang, Xiaoyan Xu, Ming Li, Xia An, Ru Huang, Institute of Microelectronics, Peking University | |
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Optimal VDD Assessment of CMOS Technology Considering Circuit Reliability Tradeoffs |
| Minghao Liu, Shaofeng Guo, Runsheng Wang, Ru Huang, Institute of Microelectronics, Peking University | |
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Investigation on LDMOS Characteristics of Layout Dependence in FinFET Technology |
| Gang Wang, Semiconductor Manufacturing International Corporation (SMIC) | |
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A High-Performance Source-Pocket Tunnel Field-Effect Transistor |
| Gaobo Xu, Huaxiang Yin, Qiuxia Xu, Guilong Tao, Zhenhua Wu, Jianhui Bo, Jinshun Bi, Yongliang Li, Huajie Zhou, Haiping Shang, Jinbiao Liu, Junjie Li, Wenjuan Xiong, Junfeng Li, Huilong Zhu, Chao Zhao, Wenwu Wang, Institute of Microelectronics, Chinese Academy of Sciences | |
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The investigation of source doping effect on on-state current in homojunction and heterojunction Tunneling FETs |
| Shuang Xia, Qian Xie, Mingjun Liu, Zheng Wang, UESTC | |
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Single-Ended Sub-threshold 9T SRAM Cell With Ground Cut-Off |
| Smaran Adarsh, Tanmay M, M S Sunita, PES University | |
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Improved Endurance of SONOS Flash Cells by Facile Lithography Processing Adjustment |
| Ning Wang, Wei Xiong, Kegang Zhang, Hualun Chen, Pingsheng Zhou, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
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Local Layout Effect Impact to Single Device in SRAM 6T Cell |
| Yijun Zhang, Nan Wang, Yu Li, Yuan Wang, Xiaohua Li, Guiying Ma, Yongcheng Zhai, Jianhua Ju, SMIC |