Dr. David Haynes
Vice President of Specialty Technologies and Strategic Marketing, CSBG, Lam Research Corp.
泛林集团客户支持事业部战略营销副总裁

讲师简介 / Speaker Bio

David gained a B.Eng and PhD in Materials Engineering from Swansea University. His PhD thesis was in the field of organic semiconductors for electronic and optoelectronic applications.
In his professional career, David has accrued more than 25 years of experience in the Semiconductor Capital Equipment and research instrumentation sectors. Focused on new technology development, he has a strong process background in plasma etch and deposition for optoelectronics, photonics, MEMS, Power and RF Electronics, as well as advanced chip packaging technologies.
Building on this technical knowledge, David has a proven track record in developing strategic business partnerships, specializing in new technology developments and introduction of enabling process capabilities to leading semiconductor fabs worldwide.
David Joined Lam Research in June 2016. He is currently Vice President of Strategic Marketing in Lam’s Customer Support Business Group and is responsible for Lam’s strategy in Specialty Technologies.

摘要 / Abstract

汽车电子、智慧能源、工业领域和5G蜂窝通讯的大规模应用，越来越依赖先进功率半导体和电源管理集成电路。

深度反应离子刻蚀起初就是为了MEMS器件的制造而开发的，如今已经成为实现硅基功率器件制造的关键技术之一。

这尤其适用于超级结结构MOSFETS的制造和在先进双极、CMOS、DMOS为基础的电源管理集成电路器件中形成深沟槽隔离特征相关的高深宽比沟槽刻蚀要求。然而，与此同时，其他电源器件例如绝缘栅双极晶体管和屏蔽栅MOSFET的制造，依赖于高精度浅沟槽的刻蚀，通常使用稳态刻蚀工艺。在不影响刻蚀质量的情况下，在单工艺设备中达成这些需求的能力使功率器件制造商具备操作灵活性，以解决广泛产品的组合。

在本演讲中，我们为大家介绍如何通过最新发布的Syndion® GP产品解决这些挑战。我们将呈现我们的深硅刻蚀硬件和工艺能力的开发如何显著改进晶圆上的结果并支持下一代功率器件的制造。这些挑战包括工艺生产力的持续提高、轮廓控制的改进、实现更平滑的刻蚀侧壁、以及提升刻蚀深度和特征关键尺寸的均匀性。