Filippo Di Giovanni

个人简介 / Biography

Filippo Di Giovanni is currently Strategic Marketing, Innovation and Key Programs Manager within the Power Transistor MACRO Division at ST, based in Catania, Italy. As Technical Marketing Manager, he helped to introduce the first strip-based MOSFETs, for both low voltage and high voltage, among the first in the power transistor industry. At the end of the nineties, he coordinated the development of “Super-junction” high-voltage MOSFETs (MDmeshTM), a real breakthrough in silicon power semiconductors.

Starting from 2012, as BU manager he worked for the development of the first 1,200V silicon carbide (SiC) MOSFETs, which have enabled ST to become today undisputable market leader and one of the main suppliers in various fields of applications, including the growing EV (electrical vehicle) market.

Dr. Di Giovanni’s experience includes also gallium nitride on silicon (GaN-on-Si) HEMT for both power conversion and RF domains. He attends various conferences and workshops dedicated to power conversion. He is a member of an ST group handling the collaborative development of GaN-on-Si with ST’s important industry partners.

摘要 / Abstract

The need for more efficient power semiconductors in energy conversion processes such as those at the heart of electrical vehicles (xEV), is speeding up the development and deployment of wide bandgap (WBG) transistors and diodes. Such products include both silicon carbide (SiC) and gallium nitride (GaN). Today SiC MOSFETs are driving car electrification successfully as they are used in the main traction inverter, on-board chargers (OBC) and DC-DC converters owing to their low on-resistance at high voltage, excellent thermal behavior and fast switching times.

In order to complement such unique material properties, packaging research has centered around new assembly techniques for power modules and packages. Multi-sintering housings such as STPAKTM are now available which simplify inverter design delivering at the same time improved electrical and thermal performances. In the STPAKTM the die is not only attached through a sintering process onto an AMB (active metal brazing) layer but also the package back side itself is mounted onto dissipating plates with the same sintering process and associated to liquid cooling. As a result, the final solution significantly improves reliability even under severe mission profiles.

HU3PAKTM is a small-outline SMD power package with top-side cooling, ideal for OBC and DC-DC converter systems. Its construction is particularly flexible in that it allows different types of heatsinks.

The ACEPACKTM family includes various modules in different form factors and are also suitable for charging stations. Finally, the ACEPACKTM DRIVE with direct-cooling capability is the best fit for vehicle’s traction inverters including heavy trucks and buses. Available in both 750V and 1,200V SiC MOSFETs, it exhibits low parasitic inductances and high-performance AMB substrates enabling very high-power density, therefore it represents an optimal solution to the most demanding car electrification’s requirements.