Date: Tuesday, March 19, 2019
Venue: Shanghai International Convention Center
Room: 5F
Attendee Registration


Materials Engineering Driven Solution for 3D NAND Technology and Its Scaling

Dr. Sean Kang
Director, Applied Materials

Sean Kang has worked in semiconductor technology for ~20 years with emphasis on front-end processes and transistor development. He focuses now on researching next-generation inflections for memory and analysing semiconductor technology trends. Before joining Applied Materials, he worked as a memory product technologist at Cisco and a process/integration engineer at Samsung Electronics. He holds a Ph.D. in materials science and engineering and MBA from the University of Michigan and has published 15 technical papers as first author and holds ~30 patents.



Exploring the Best Memory Solution : DRAM & PCM

Dr. Hongsik Jeong
Professor in Tsinghua University

He received the B.S., M.S., and Ph.D. degrees in physics from Yonsei University, Korea in 1985, 1987, and 1992, respectively. After post doctor at KRISS, Taejon, Korea, he joined the Semiconductor R&D center of Samsung Electronics Co., Ltd., Kyungki-Do, Korea in 1992 as a senior researcher for etching process development. From 1997 to 2002, he had been engaged in the development of process integration for DRAM. During this period, he successfully led the research and development projects such as 150nm, 130nm 1Gb DRAM (1997-1999), a world first 4Gb DRAM integration technology (2000) and several important DRAM technologies as a project leader. In 2002, he was selected as a pioneering leader for challenging new memory device projects such as PRAM, MRAM and FRAM in Samsung.

He received the Korean presidential award due to the achievement of worldwide leadership of new memory devices in 2005. And then he was promoted as a Vice President in Samsung Semiconductor R&D Center and Memory Business Division. He had led various TF teams from MRAM on verification level to PRAM and FRAM on the product level. Finally, PRAM had been succeeded in development for production, world first 82nm, 58nm and 39nm technology node 1Gb PRAM devices for mobile phone application have been developed and launched successfully under his leadership until 2013.

In 2014, he moved to Yonsei University in Korea as a research professor studying the new concept of computing based on new memory devices. Since 2016, he has studied neuromorphic devices for AI applications as a professor of EE department and CBICR (Center for Brain-Inspired Computing Research) in Beijing, China.  He has also contributed international new memory society as a key person for enhancing collaboration between worldwide new memory researchers. He has published 1 chapter of a book, over 120 technical papers, 40 patents and given over 30 presentations in international conferences as a keynote and invited speaker.