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Dr. Iyechika was born in Oita, Kyushu, Japan in 1955. He graduated Bachelor (1978), Master (1980) and Ph. D (1983) Degrees from Tokyo University by research on optical properties of organic molecular crystals. In 1992, he started research on MOCVD growth of GaN. Before it, he worked for development of optical disc memory and organic light emitting devices. He is currently engaged in development of MOCVD technology for on-silicon epitaxy, especially in epi-wafer evaluation by X-ray diffraction and in-situ optical temperature and reflectance monitoring. His main concern is highly uniform and repeatable epi-growth of GaN based materials on 8/6 inch silicon wafers by single-wafer multiple chamber MOCVD system.
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