Dr David Haynes
VP Strategic Marketing of Lam Research Corporation

讲师简介 / Speaker Bio

David gained a B.Eng and PhD in Materials Engineering from Swansea University. His PhD thesis was in the field of organic semiconductors for electronic and optoelectronic applications.

In his professional career, David has accrued more than 25 years of experience in the Semiconductor Capital Equipment and research instrumentation sectors. Focused on new technology development, he has a strong process background in plasma etch and deposition for optoelectronics, photonics, MEMS, Power and RF Electronics, as well as advanced chip packaging technologies.

Building on this technical knowledge, David has a proven track record in developing strategic business partnerships, specializing in new technology developments and introduction of enabling process capabilities to leading semiconductor fabs worldwide.

David Joined Lam Research in June 2016. He is currently Vice President of Strategic Marketing in Lam’s Customer Support Business Group and is responsible for Lam’s strategy in Specialty Technologies.

摘要 / Abstract

Third generation, wide bandgap semiconductor materials such as SiC and GaN can address a range of key applications. GaN in particular has huge potential in high power and high frequency applications. GaN HEMTs are already outperforming silicon based super junction MOSFETs in rapid charging applications and GaAs HEMTs in RF devices. This is driving rapid demand for such devices. For example, Yole Development are forecasting a CAGR rate of >50% for the GaN power device market over the next 5 years.

Despite the on-going adoption of GaN devices, unique technical challenges associated with GaN HEMT fabrication still need to be addressed to further improve both device performance and reliability, and manufacturing productivity and yield.

One example is the need for ultra-low damage, highly selective etch processes that have atomic scale precision. Lam is addressing this need through combining highly optimized steady state processes with pulsed plasma and atomic layer etch processes in the same high-volume, production proven process module.

In addition to the etch challenges, there are numerous other plasma deposition and clean process steps that are also critical to improving GaN device performance. Notably, the passivation of the GaN transistor gates is an area where improvements in passivation quality and reduction in plasma induced damage have a significant benefit on device performance. So, we are using Lam’s single wafer clean solutions to optimize both the passivation process itself and the pre-passivation surface cleaning of the wafers.

One of the key potential advantages of GaN on Si based technologies is the ability to integrate them into CMOS fabs and foundries which enables their heterogeneous integration with Si devices. However, this creates the need to manage gallium contamination on the wafer backside and bevel. This is another area where Lam is bringing our single wafer clean and bevel engineering experience to bear on GaN device fabrication.

At Lam, we have focused on GaN on Si based HEMT and monolithically integrated IC devices for power management applications. However, we are already applying the learning to key GaN on Si RF applications and to other GaN based devices such as micro-LEDs. In this paper we will summarize the capabilities that we have developed to support GaN device manufacture and highlight some of the benefits that they are delivering to our customers.