Jin-Ping Ao 敖金平
Professor of Jiangnan University

讲师简介 / Speaker Bio

Dr. Jin-Ping Ao, Professor and Doctor Supervisor of Jiangnan University, senior member of the IEEE. Dr. Ao received his BS degree in physics from Wuhan University in 1989, Wuhan, MS degree in semiconductor physics and devices from Hebei Semiconductor Research Institute (HSRI) in 1992, Shijiazhuang, and PhD degree in electronic engineering from Jilin University in 2000, Changchun, China. He joined HSRI in 1992, working on high-speed compound semiconductor devices and integrated circuits, optoelectronic devices and optoelectronic integrated circuits. He joined The University of Tokushima, Japan, in Feb 2001, as an associate professor involved in the research and development of wide bandgap semiconductor electronic devices, monolithic integrated circuits, chemical sensor and optoelectronic devices. From 2016, he became a professor and doctoral supervisor of Xidian University. He joint Jiangnan University in 2022. He published more than 300 papers in international journals and conferences, owing more than 30 patents. He is also one of the founders of Ningbo Niway Semiconductor Co. Ltd.

摘要 / Abstract

Gallium nitride (GaN) is one of the most important wide bandgap semiconductors. It is being used to develop short-wavelength light emitting diodes and laser diodes, as well as being the key material for the next generation high-frequency, high-power and high-temperature electron devices. The AlGaN/GaN heterostructure is also regarded to be a prospective candidate to develop devices and monolithic integrated circuits for the application in millimeter-wave band owing to the high saturation velocity and high sheet carrier concentration of the two-dimensional electron gas layer in this material system. In this talk, GaN Schottky barrier diodes (SBDs) with quasi-vertical structure are specially designed and manufactured for the low-power microwave rectification. Heavily-doped epitaxial layer and patterned Schottky anode are adopted to reduce the GaN SBD series resistance. On-resistance of 1.45 Ω and junction capacitance of 0.87 pF were obtained, respectively, at reverse breakdown voltage of 50 V. Finally, microwave rectifiers are designed and measured. Owing to the outstanding diode performance and microwave circuit design, a measured conversion efficiency of 92% was achieved at the input power of 23 dBm at 905 MHz. At 2.45 GHz, a measured conversion efficiency of 91% was achieved at the input power of 25 dBm. The transmission distance is 3 m under emission power of 39 dBm and receiving power of 12.5 dBm at 905 MHz.